Heater unit, heating and cooling device, and apparatus comprising same

ABSTRACT

A heater unit has excellent uniform heat properties in a wafer placement surface, and is capable of rapid temperature increase and rapid cooling, also has high rigidity. A heating and cooling device that includes the heater unit is used as a manufacturing or inspection apparatus and is used for work with glass substrates or semiconductor substrates for flat panel displays. The heater comprises a first uniform heat plate having a placement surface on which a substrate is placed, a second uniform heat plate for supporting the first uniform heat plate, and at least one layer of a insulated resistance heating element provided between the first uniform heat plate and the second uniform heat plate. The first uniform heat plate and the second uniform heat plate have a differing thermal conductivity and differing Young&#39;s modulus.

BACKGROUND OF THE INVENTION

1. Technical Field

The present invention relates primarily to a heater unit used to heat aglass substrate or a semiconductor substrate for a flat panel display, aheating and cooling device including this heater unit, and amanufacturing or inspection apparatus equipped with these devices; thepresent invention particularly relates to a heat treatment apparatusused in a photolithography step or a prober inspection step, or to aheat treatment apparatus used in the final inspection step of asemiconductor substrate.

2. Related Background Art

Many apparatuses have been developed which can heat-treat an object tobe heated when it is placed thereon, and there are heating and coolingdevices composed of aluminum or another metal or a ceramic, for example,see Japanese Laid-open Patent Application No. 11-040330 and JapaneseLaid-open Patent Application No. 2007-150294.

Among these apparatuses, a heater used in the manufacturing step orinspection step of a semiconductor apparatus or a flat panel displayneeds to have uniformity of temperature distribution (also referred toas uniform heat properties hereinbelow) particularly in the surface onwhich the object to be heated is placed. Specific examples of theaforementioned steps include heat-curing of a photosensitive resin,heat-firing of a low-dielectric insulating film such as a low-κ film,CVD film formation for forming wiring, an insulating layer, or the like,etching, and other steps. Otherwise, to perform inspection at thedesired temperature, the heater used to raise the temperature of thesubstrate must have the same characteristics.

In the production of these semiconductor apparatuses and flat paneldisplays, a goal is to reduce the price of the products by large-scaleproduction by continuous operation, and because of this, there is demandfor shortening the takt time with the manufacturing apparatuses andinspection apparatuses. To obtain a high throughput with one apparatus,the treatment time of the heat treatment step itself of the object beingtreated must of course be shortened, the object being maintained at aconstant temperature and subjected to a predetermined treatment, andwhat also must be shortened is the time needed to change the settemperature of the heater (temperature increasing time, cooling time)along with changes in the treatment conditions.

To resolve the problems described above, the inventors have alreadyinvented a heater for manufacturing a semiconductor apparatus. Thisheater is configured so that a cooling plate and a heater plate whichhave desired heat capacities can be separated from each other andbrought in contact with each other. With this heater, during heating,the cooling plate is rapidly increased in temperature by being separatedfrom the heater plate, and during cooling, the cooling plate is broughtin contact with the heated heater plate, whereby the placement standprovided to the heater plate and the object to be heated placed on thisplacement stand can be rapidly cooled (see Japanese Laid-open PatentApplication No. 2004-014655). Thereby, it has been possible to shortenthe required time of the entire production process.

FIG. 11 is a schematic cross-sectional view of the heater describedabove. A heater 1 is configured from a heater plate 2 on which asubstrate is placed and heated, a cooling plate 3 for quickly coolingthe heater plate 2, and a container 4 composed of stainless steel or thelike for shielding the heat of the heater plate 2 from being easilytransferred to other production apparatuses. The heater plate 2 issupported by a rod or other support means (not shown) provided to thecontainer 4. The heater plate 2 is also provided with a side thermometeror another temperature sensor 5 for measuring the temperature of theheater.

The heater plate 2 can be configured, for example, from a placementstand 50 on which a semiconductor substrate is placed, and heatingelement circuit 51 arranged in, e.g., a coiled configuration, anddisposed on the underside of the placement stand 50. The heating elementcircuit 51 may be formed by tungsten metallization. The heating elementcircuit 51 is insulated by being coated by an electrical insulating film(not shown).

FIG. 12 is an example showing the structure of the heater plate 2.Specifically, a heating element circuit 53 configured from stainlesssteel or nickel chrome foil is sandwiched between insulating sheets 54as necessary and is placed between a placement plate 52 and a pressplate 55. The press plate 55 and the placement plate 52 are mechanicallyfixed in place using rivets, bolts and nuts, or other coupling means 56.Wiring (not shown) is connected to the heating element circuits 51, 53,and the heater plate 2 performs heating by a supply of electricity viathis wiring.

Referring again to FIG. 11, a refrigerant flow passage 3 a is formed inthe cooling plate 3, through which refrigerant is caused to flow forcooling purposes. Separating and bringing the cooling plate 3 and heaterplate 2 together can be accomplished by driving the cooling plate 3 upand down by an air cylinder or another raising/lowering mechanism (notshown), for example. During heating, the cooling plate 3 is drivendownward and separated from the heater plate 2 as shown in FIG. 13A.During cooling, the cooling plate 3 is driven upward and brought incontact with the heater plate 2 as shown in FIG. 13B.

Next, referring to FIGS. 13A and 13B, a description is given of theprocedure for performing the heat treatment on the object to be heatedusing the heater 1. First, electricity is passed through the heatingelement circuit 51 of the heater plate 2, which has a low temperature inthe state shown in FIG. 13A, and the heater plate 2 is increased intemperature. A wafer (semiconductor substrate), a glass substrate, oranother object to be heated S is then placed on the placement stand 50,and the object to be heated S is heated. When the heat treatment, whichis about 60 to 180 seconds, is ended, the object to be heated S is takenoff of the placement stand 50, the next object to be heated S is placedon the placement stand 50, and the same heat treatment is performed.

After the heat treatment described above has been repeated and apredetermined quantity of objects to be heated S have been heat treated,the temperature conditions are changed in order to perform a heattreatment for a process separate from the heat treatment describedabove. When the temperature condition changes are changes that cause thetemperature to increase, the temperature may be changed merely bychanging the energy supply conditions in the state shown in FIG. 13A.When the changes cause the temperature to decrease, the energy supply tothe heating element circuit 51 of the heater plate 2 is temporarilystopped, after which the raising/lowering mechanism (not shown) is usedto bring the cooling plate 3 in contact with the heater plate 2 as shownin FIG. 13B, and the heat of the heater plate 2 diffuses to the coolingplate 3. The temperature of the heater plate 2 and the object to beheated S can thereby be lowered rapidly.

At this time, cooling water or another refrigerant may be caused to flowthrough the refrigerant flow passage (not shown in FIG. 13) of thecooling plate 3. The heat transferred to the cooling plate 3 is expelledout of the heater system via this refrigerant, whereby heat can beeffectively vented. After the temperature sensor 5 for controlling theheater has sensed that the set temperature has been approximatelyreached, the cooling plate 3 is separated from the heater plate 2 andreturned to the state shown in FIG. 13A, and an energy supply to theheating element circuit 51 is started in order to maintain the settemperature. The throughput can be improved by changing the temperatureconditions during cooling in a short amount of time in this manner.

DISCLOSURE OF THE INVENTION Problems which the Invention is Intended toSolve

However, since recently there has been a demand for greater precisionand improved throughput, there is also demand for faster temperatureincreasing rates and cooling rates while maintaining highly uniform heatproperties in the placement surface of the heater plate. To achievethis, it is preferable that the heat capacity of the placement stand bereduced as much as possible, i.e., that the placement stand be reducedin weight and thinned. However, when the placement stand is formed froma metal plate, the metal has low rigidity; therefore, the metal bendswhen thinned and warps when increased in temperature, and it has notbeen possible to maintain satisfactory uniform heat properties. When theplacement stand is formed from a ceramic plate, the ceramic hascomparatively high rigidity and can therefore be made thinner, but whenthe ceramic is thinned it is difficult to ensure uniform heatproperties, the ceramic readily cracks, and the ceramic has notwithstood practical application.

The present invention was devised in view of problems such as thosedescribed above, and an object thereof is to increase the rates oftemperature increase and temperature decrease without compromising theuniform heat properties in the placement surface, or while maintainingmore highly uniform heat properties than in conventional practice. Byaccomplishing this object, particularly in the process of manufacturingsemiconductor apparatuses or flat panel displays, the heating processunder subsequent conditions can be carried out quickly after changeshave been made to the temperature conditions so as to increase or reducethe temperature. By achieving highly uniform heat properties in theplacement surface, it is possible to reduce discrepancies in the filmthickness or line width during the photolithography step, for example,during the semiconductor manufacturing process.

In other words, an object is to improve the productivity, performance,yield rate, and reliability of semiconductor apparatuses and flat paneldisplay apparatuses manufactured and inspected by this heat treatmentstep, by reducing temperature discrepancies in the placement surfaceduring the heat treatment step and shortening the time needed toincrease the temperature and change the cooling temperature.

Means Used to Solve the Above-Mentioned Problems

To achieve the objects described above, the heater unit provided by thepresent invention is a heater unit comprising a first uniform heat platehaving a placement surface for placing a substrate, a second uniformheat plate for supporting the first uniform heat plate, and at least onelayer of a insulated resistance heating element provided between thefirst uniform heat plate and the second uniform heat plate; the firstuniform heat plate of the heater unit having a first thermalconductivity K1 and a first Young's modulus Y1, and the second uniformheat plate of the heater unit have a second thermal conductivity K2 anda second Young's modulus Y2, where K1≠K2 and Y1≠Y2.

Another embodiment of the present invention is a heater unit wherein thefirst uniform heat plate is formed of a metal, the second uniform heatplate is formed of a ceramic or a metal-ceramic composite material, therelationship between the thermal conductivity of each of the firstuniform heat plate and the second uniform heat plate, is K1>K2, and therelationship between the Young's modulus of each of the first uniformheat plate and the second uniform heat plate is Y2>Y1.

Another embodiment of the present invention is a heater unit wherein thetotal of the thicknesses of the first uniform heat plate and the seconduniform heat plate is 1/40 or less of the diameter of the first uniformheat plate, the insulated resistance heating element is integrallyformed using a resistance heating element and a heat-resistantinsulator, the heat-resistant insulator is a heat-resistant insulatorwhose primary constituent is polyimide or Teflon, or both, and thethickness of the insulated resistance heating element is 0.5 mm or less.

Another embodiment of the present invention is a heater unit wherein thefirst uniform heat plate and the second uniform heat plate are both 1 mmor greater in thickness.

Another embodiment of the present invention is a heater unit where thesecond uniform heat plate has a surface in contact with the insulatedresistance heating element and the surface has a flatness that is 100 μmor less.

Another embodiment of the present invention is a heater unit wherein thesecond uniform heat plate has a surface in contact with the insulatedresistance heating element, the surface includes an upwardly concaveshape.

Another embodiment of the present invention is a heater unit wherein thefirst uniform heat plate and the second uniform heat plate are bondedtogether so that their opposing surfaces are movable relative to eachother in substantially parallel directions, and one of the first uniformheat plate and the second uniform heat plate is formed of metal and issubjected to processing providing flexibility on at least one side,while the other of the first uniform heat plate and the second uniformheat plate is formed of a ceramic or a metal-ceramic composite material.

Another embodiment of the present invention is a heater unit wherein theone of the first uniform heat plate and the second uniform heat platecomprises a metal with a first thickness and the other of the firstuniform heat plate and the second uniform heat plate comprises a ceramicor a metal-ceramic composite material with a second thickness, the firstthickness being equal to or less than the second thickness.

Another embodiment of the present invention is a heater unit wherein thesecond uniform heat plate includes a surface in contact with theinsulated resistance heating element, the surface having a flatness thatis 100 μm or less.

Another embodiment of the present invention is a heater unit wherein thesecond uniform heat plate includes a surface in contact with theinsulated resistance heating element, the surface having an upwardlyconcave shape.

Another embodiment of the present invention is a heater unit wherein thebond allowing the relative movement is a bond achieved by vacuum-suctionmeans or a bond achieved by bonding means including a combination ofscrews and bearings.

Another embodiment of the present invention is a heater unit furthercomprising a vacuum-sealing member used as the vacuum-suction means.

Another embodiment of the present invention is a heater unit wherein thevacuum-sealing member is disposed in an external peripheral vicinity ofthe first uniform heat plate and the second uniform heat plate.

Another embodiment of the present invention is a heating and coolingdevice comprising the heater unit of the previously describedembodiments, and a mobile cooling plate provided underneath the heaterunit.

Another embodiment of the present invention is a manufacturing orinspection apparatus for glass substrates or semiconductor substratesfor flat panel displays, comprising the heater unit of the previouslydescribed embodiments.

Another embodiment of the present invention is a manufacturing orinspection apparatus for glass substrates or semiconductor substratesfor flat panel displays, comprising the heating and cooling device ofthe previously described embodiments.

Effect of the Intentioned

According to the present invention, the flatness of the placement standdoes not change over time, and either uniform heat properties similar toconventional practice can be maintained, or more highly uniform heatproperties than in conventional practice can be maintained. Furthermore,according to the present invention, changes in flatness duringtemperature increases and decreases can be suppressed and the rate oftemperature increases and decreases can be increased while the creationof particles is also suppressed.

As a result, particularly in the steps of manufacturing a semiconductorapparatus or a flat panel display apparatus, after temperatureconditions have been changed so that the temperature increases ordecreases, the heating process can be quickly carried out underdifferent conditions. By achieving highly uniform heat properties in theplacement surface of the placement stand, it is possible to reducediscrepancies in the film thickness or line width during, for example,the photolithography step of the semiconductor manufacturing process.Furthermore, in the inspection step, it is possible to consistentlyreplicate fixed uniform heat properties and probing properties in theprober apparatus without varying the flatness of the placement surface.

It is thereby possible to provide a heating and cooling device which ishighly reliably for a manufacturing apparatus or inspection apparatus ofa semiconductor substrate or a glass substrate for a flat panel display.That is, by stabilizing the temperature discrepancies in the placementsurface in the heat treatment step and shortening the time needed tochange the temperature for temperature increases and cooling, it ispossible to improve the productivity, performance, yield rate, andreliability of semiconductor apparatuses and flat panel displayapparatuses manufactured and inspected by this heat treatment step. Inthe present invention, manufacturing at low cost can also be achieved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic sectional view showing the heating and coolingdevice according to the first embodiment of the present invention, whichis accommodated in a container;

FIG. 2 is a schematic sectional view showing the heating and coolingdevice according to the first embodiment of the present invention, whichis accommodated in a container;

FIG. 3A is a schematic view showing a state in which the mobile coolingplate in the heating and cooling device shown in FIG. 1 is separatedfrom the heater unit;

FIG. 3B is a schematic view showing a state in which the mobile coolingplate in the heating and cooling device shown in FIG. 1 is in contactwith the heater unit;

FIG. 4A is a schematic sectional view showing the heater unit accordingto the second embodiment of the present invention;

FIG. 4B is a schematic sectional view showing the heater unit accordingto the second embodiment of the present invention;

FIG. 4C is a schematic sectional view showing the heater unit accordingto the second embodiment of the present invention;

FIG. 4D is a schematic sectional view showing the heater unit accordingto the second embodiment of the present invention;

FIG. 5 is a schematic view showing a specific example of processing forproviding flexibility in a metal uniform heat plate of the heater unitaccording to the second embodiment of the present invention;

FIG. 6 is a schematic sectional view showing another example of theheater unit according to the second embodiment of the present invention;

FIG. 7 is a schematic sectional view showing an example of an insulatedresistance heating element of the heater unit according to the secondembodiment of the present invention;

FIG. 8A is a schematic sectional view showing yet another example of theheater unit according to the second embodiment of the present invention;

FIG. 8B is a schematic sectional view showing yet another example of theheater unit according to the second embodiment of the present invention;

FIG. 9A is a schematic partial sectional view showing a specific exampleof the vacuum-sealing member provided in the preferred manner to theheater unit according to the second embodiment of the present invention;

FIG. 9B is a schematic partial sectional view showing a specific exampleof the vacuum-sealing member provided in the preferred manner to theheater unit according to the second embodiment of the present invention;

FIG. 9C is a schematic partial sectional view showing a specific exampleof the vacuum-sealing member provided in the preferred manner to theheater unit according to the second embodiment of the present invention;

FIG. 10 is a schematic sectional view showing a heating and coolingdevice comprising a mobile cooling plate and the heater unit of thesecond embodiment of the present invention, which is accommodated in acontainer;

FIG. 11 is a schematic sectional view showing a conventional heatercomposed of a heater plate and a cooling plate;

FIG. 12 is a schematic sectional view showing another specific exampleof a conventional heater plate;

FIG. 13A is a schematic sectional view showing a state in which theheater plate and the cooling plate of the conventional heater areseparated; and

FIG. 13B is a schematic sectional view showing a state in which theheater plate and the cooling plate of the conventional heater are incontact.

DETAILED DESCRIPTION OF THE INVENTION

The heater unit of the present invention is a heater unit comprising afirst uniform heat plate having a placement surface on which a substrateis placed, a second uniform heat plate for supporting the first uniformheat plate, and an insulated resistance heating element made of at leastone layer provided between the first uniform heat plate and the seconduniform heat plate, wherein the first uniform heat plate and the seconduniform heat plate have different thermal conductivities and Young'smoduli.

The heating and cooling device of the present invention comprises theheater unit of the present invention, and a mobile cooling plateprovided underneath the heater unit.

The manufacturing or inspection device for a semiconductor substrate orfor a glass substrate for a flat panel display of the present inventioncomprises the heater unit or the heating and cooling device of thepresent invention. Preferred embodiments of the present invention aredescribed hereinbelow with reference to the drawings.

First, the first embodiment of the present invention will be described.

The heater unit of the first embodiment of the present invention is theheater unit characterized in that the first uniform heat plate iscomposed of metal, the second uniform heat plate is composed of aceramic or a metal-ceramic composite material, the relationship betweenthe thermal conductivities of the first uniform heat plate and thesecond uniform heat plate, denoted as K1 and K2 respectively, is K1>K2,and the relationship between the Young's moduli of the first uniformheat plate and the second uniform heat plate, denoted as Y1 and Y2respectively, is Y2>Y1.

FIG. 1 relates to the first embodiment, and is a schematic sectionalview of a heating and cooling device 1 comprising a heater unit 10 onwhich a wafer is placed and heated, and a mobile cooling plate 20provided at the bottom of the heater unit 10. The heater unit 10 has afirst uniform heat plate 11, a second uniform heat plate 12 forsupporting the first uniform heat plate 11 from below, and an insulatedresistance heating element 13 provided between the first uniform heatplate 11 and the second uniform heat plate 12. The first uniform heatplate 11 preferably has a circular plate shape, one side of whichcomprises a wafer placement surface 11 a on which a wafer is placed. Theshapes of the second uniform heat plate 12 and the insulated resistanceheating element 13 are not particularly limited, but are preferablycircular plate shapes having the same diameter as the first uniform heatplate 11.

The first uniform heat plate 11 is formed from a metal that is amaterial having high thermal conductivity in order to obtain highlyuniform heat properties in the wafer placement surface 11 a. The type ofmetal is not particularly limited, but the thermal conductivity ispreferably 100 W/mK or greater. Possible examples of this metal includecopper, aluminum, tungsten, molybdenum, alloys including these metals,and the like.

The second uniform heat plate 12 is formed from a ceramic or ametal-ceramic composite material that has a high Young's modulus inorder to provide the entire heater unit 10 with high rigidity. The typeof ceramic is not particularly limited, but possible examples includesilicon carbide, alumina, aluminum nitride, silicon nitride, and thelike. Possible examples of the metal-ceramic composite material includea composite of aluminum or silicon, and silicon carbide, aluminumnitride, or another ceramic.

When the uniform heat plate is made of metal or a metal-ceramiccomposite material, the surface may be treated with a highlycorrosion-resistant material such as Ni or another comparatively hardmetal, alumite, or another ceramic, or a Teflon-based or polyimide-basedresin. In addition to durability being improved by such a surfacetreatment, it is possible to prevent contamination or the occurrence ofparticles which would be a source of contamination in the semiconductormanufacturing apparatus or other final products. The same surfacetreatment may of course also be performed in the case of ceramics.

In the first embodiment of the present invention, with the combinationof materials of the first uniform heat plate 11 and the second uniformheat plate 12 as described above, when the thermal conductivity of thefirst uniform heat plate 11 at room temperature is denoted as K1, theYoung's modulus as Y1, the thermal conductivity of the second uniformheat plate 12 as K2, and the Young's modulus as Y2, they have therelationships K1>K2 and Y2>Y1. Thereby, the first uniform heat plate 11can be given the role of increasing the uniform heat properties in thewafer placement surface 11 a, while the second uniform heat plate 12 canbe given the role of increasing the rigidity of the entire heater unit10, and as a result, it is possible to achieve with low cost a heaterunit 10 having both highly uniform heat properties and high rigidity.

That is, the first uniform heat plate 11 is formed from a metal of highthermal conductivity and the second uniform heat plate 12 is formed froma highly rigid ceramic or metal-ceramic composite material so as tosatisfy the aforementioned relationships between the two layer's thermalconductivities and between the two layer's Young's moduli, and theinsulated resistance heating element 13 also provided between these twoplates, whereby the heat generated by the insulated resistance heatingelement 13 can be transferred to the first uniform heat plate 11 of highthermal conductivity and quickly diffused through the entire surface ofthe wafer placement surface 11 a. Highly uniform heat properties arethereby obtained in the wafer placement surface 11 a.

Since the rigidity of the heater unit 10 can be settled by the seconduniform heat plate 12, the first uniform heat plate 11 can be reduced inthickness. As a result, the heat capacity of the first uniform heatplate 11 can be reduced, and it is possible to rapidly increase orreduce the temperature of the wafer placed on the wafer placementsurface 11 a. Thus, rapid temperature increase is possible regardless ofthe heater unit 10 shown in FIG. 1 being highly rigid. This isparticularly effective when the heater unit 10 is used in an inspectionapparatus such as a wafer prober which applies a strong perpendicularforce to the wafer placement surface 11 a.

The specific Young's modulus of the second uniform heat plate 12 is notparticularly limited, but is preferably 200 GPa or greater. This isbecause at 200 GPa or greater, the deformation of the second uniformheat plate 12 can be reduced significantly, and the second uniform heatplate 12 can thereby be made thinner and lighter.

As described above, the second uniform heat plate 12 is characterized inhaving high rigidity and a lower thermal conductivity than the firstuniform heat plate 11, but the thermal conductivity of the seconduniform heat plate 12 is preferably high to a certain extent. The reasonfor this is because the mobile cooling plate is provided at the bottomof the second uniform heat plate 12 as will be described hereinafter,and the heat of the heater unit 10 can therefore be transferred to thecooling plate without requiring much time. From this viewpoint, thematerial of the second uniform heat plate 12 is preferably siliconcarbide, aluminum nitride, or silicon nitride in the case of a ceramic,and preferably a composite of aluminum or silicon and silicon carbide oraluminum nitride in the case of a metal-ceramic composite material.

The second uniform heat plate 12 and the first uniform heat plate 11which has the lower Young's modulus are bonded together by screws or thelike as will be described hereinafter, and the first uniform heat plate11 and the second uniform heat plate 12 are thereby firmly fixedtogether via the insulated resistance heating element 13. When heatingand cooling are alternately repeated by the insulated resistance heatingelement 13 and the hereinafter-described mobile cooling plate 20 in thisstate, the surface of the first uniform heat plate 11 in contact withthe insulated resistance heating element 13 conforms to the shape of thesurface of the second uniform heat plate 12 in contact with theinsulated resistance heating element 13, regardless of the insulatedresistance heating element 13 being located in between the two plates.In other words, the surface of the former deforms along the shape of thesurface of the latter.

As a result, if the surface of the second uniform heat plate 12 incontact with the insulated resistance heating element 13 has poorflatness, the flatness of the surface of the first uniform heat plate 11in contact with the insulated resistance heating element 13 is alsoworsened, and the effect of this causes the flatness of the waferplacement surface 11 a of the first uniform heat plate 11 to worsen.Thereby, there is a risk of the uniform heat properties being reduced inthe wafer placement surface 11 a. To avoid such problems, the flatnessof the surface of the second uniform heat plate 12 in contact with theinsulated resistance heating element 13 is preferably 100 μm or less,and more preferably 50 μm or less. Specifically, if the flatness exceeds100 μm, the flatness of the wafer placement surface 11 a graduallyworsens, and there is a risk that the uniform heat properties in thewafer placement surface 11 a will decrease as well.

Even if the surface of the second uniform heat plate 12 in contact withthe insulated resistance heating element 13 has a flatness of 100 μm orless, the shape of this surface, rather than being upwardly convex,preferably concaves upward, i.e., preferably has a mortar-like shapewherein the substantial center of the surface is caved in. The reasonfor this is because if the surface of the second uniform heat plate 12in contact with the insulated resistance heating element 13 concavesupward, the deformation of the first uniform heat plate II along thisshape progresses smoothly, and the effect of the decrease in uniformheat properties in the wafer placement surface 11 a can therefore bereduced. The term “flatness of the surface” refers to the distancebetween two other flat surfaces parallel to each other on either sidesof the first surface, wherein the two flat surfaces are envisioned ashaving the shortest possible distance separating them from each other.

The first uniform heat plate 11 may have a hole, groove, or otherconcavity for fixing the placed wafer by suction in the side with thewafer placement surface 11 a. This concavity is formed by commonmechanical processing, and the first uniform heat plate 11 is thereforepreferably a material that is easily mechanically processed. This isanother respect from which it is preferable that the first uniform heatplate 11 be a material having a lower Young's modulus than the seconduniform heat plate 12.

A possible example of a preferred embodiment of the heater unit 10 whichtakes all this into account is a case in which copper or a copper alloyis used for the material of the first uniform heat plate 11, and SiC,AlN, Si—SiC (a composite of Si and Sic), or Al—SiC (a composite of Aland SiC) is used for the material of the second uniform heat plate 12.When the intention is to make the heater unit 10 lighter, aluminum or analloy thereof is preferably used for the material of the first uniformheat plate 11, and SiC or Si—SiC is preferably used for the material ofthe second uniform heat plate 12.

In the first embodiment of the present invention, the total (A1+A2) ofthe thickness of the first uniform heat plate 11 (A1) and the thicknessof the second uniform heat plate 12 (A2) is preferably 1/40 of thediameter of the first uniform heat plate 11 (B) or less. If this valueexceeds 1/40, the heat capacity of the entire heater unit 10 will be toolarge, and it will be difficult to rapidly increase the temperature orperform rapid cooling. The thickness of the first uniform heat plate 11(A1) and the thickness of the second uniform heat plate 12 (A2) are bothpreferably 1 mm or greater. This is because if these thicknesses are anylower, there is a risk of the first uniform heat plate 11 or the seconduniform heat plate 12 warping or cracking.

The resistance heating element 13 a heats the wafer placed on the waferplacement surface 11 a by Joule heat produced when electricity issupplied to a conductor. This conductor is not limited, butmicrofabricated metal foil is preferably used. Examples of materialsthat can be used for the conductor include nickel, stainless steel,silver, tungsten, molybdenum, chrome, inconel, and alloys thereof. Forexample, a stainless steel or nickel chrome foil can be formed byetching so as to form a spiraling heating element circuit pattern, forexample. Of these examples, stainless steel in particular is preferred.This is because a fine metal foil can be processed in a comparativelyprecise manner. In addition to being inexpensive, this foil is alsopreferred because, being resistant to oxidation, the foil can withstanduse over extended periods even at high temperatures. Possible examplesof the method for processing the fine metal foil include etching, laserprocessing, and the like.

The insulated resistance heating element 13 of the present invention mayhave a structure in which a heat-resistant insulator is integrallyformed with a resistance heating element 13 a. The heat-resistantinsulator may be a heat-resistant insulator whose primary constituent ispolyimide or Teflon, or both. The thickness (C) of the insulatedresistance heating element 13 having this integrated structure ispreferably 0.5 mm or less. This is because if the thickness exceeds 0.5mm, there will be heat transfer resistance during cooling, and it willbe difficult to perform rapid cooling. The lower limit of the thickness(C) of the insulated resistance heating element 13 having thisintegrated structure is not particularly limited, but is commonly 0.02mm or greater. This is because it is technically difficult to create athin insulated resistance heating element 13 having a thickness of lessthan 0.02 mm, and it would not be cost-effective.

Insulation can be provided between the resistance heating element 13 aand the first uniform heat plate 11, between the resistance heatingelement 13 a and the second uniform heat plate 12, or between tworesistance heating elements 13 a, for example, by providing a sheethaving electrical insulating properties. When there are a plural numberof layers of resistance heating elements 13 a, their stacking order isnot particularly limited, but the rate of temperature increase can bechanged from that of the case of one layer by stacking a plurality oflayers and allowing them to be energized individually. It is alsopossible to create a design which further improves uniform heatproperties because local temperature control can be performed, forexample, by combining heating element circuits having differentpatterns.

Flexible insulating sheets may be used between the first and seconduniform heat plates 11, 12 and the resistance heating element 13 a inorder to satisfactorily diffuse the heat of the resistance heatingelement 13 a. In this case, it is preferable that a sheet having as highof a thermal conductivity as possible be used for the insulating sheet.

For example, when two resistance heating elements 13 a are provided, theconfiguration is preferably as is shown in FIG. 7: insulating sheet 13b/resistance heating element 13 a/insulating sheet 13 b/resistanceheating element 13 a/insulating sheet 13 b. Other options include havingthe resistance heating element 13 a in separable contact with theinsulating sheet 13 b, adhering or fusing only one side of theresistance heating element 13 a to the insulating sheet 13 b, andadhering or fusing both sides of the resistance heating element 13 a tothe insulating sheet 13 b. When at least one side is adhered or fused tothe insulating sheet 13 b, setting these layers between the first andsecond uniform heat plates 11, 12 becomes easier.

In cases of a plurality of resistance heating elements 13 a, theresistance heating elements 13 a can be adhered or fused together via aninsulating sheet 13 b, the insulating sheets 13 b adjacent to the firstand second uniform heat plates 11, 12 can also be adhered or fused tothe resistance heating elements 13 a, and the resistance heatingelements 13 a and insulating sheets 13 b can have an integratedstructure. When a plurality of resistance heating elements 13 a areintegrated in an insulated state in this manner, setting the resistanceheating elements 13 a between the first and second uniform heat plates11, 12 becomes easier. The insulated resistance heating element may beadhered or fused individually to the first uniform heat plate 11 and/orthe second uniform heat plate 12. Setting becomes easier in this case aswell. It is preferable that the thinner the insulating sheet 13 b, themore the heat resistance can be reduced, as long as the thicknessrequired in the electrical insulating design of the resistance heatingelement 13 a is satisfied.

The heater unit 10 is obtained by sandwiching and bonding this insulatedresistance heating element 13 between the first uniform heat plate 11and the second uniform heat plate 12. For this bonding, the firstuniform heat plate 11 and the second uniform heat plate 12 arepreferably fixed together using screws, clamps, or another mechanicalbonding means, for example. The first uniform heat plate 11 and theinsulated resistance heating element 13 can be adhered together, as canthe second uniform heat plate 12 and the insulated resistance heatingelement 13, by an adhesive or another adhesion means. Furthermore, agroove, hole, or other concavity for vacuum-suction may be mechanicallyprocessed into the surface of the first uniform heat plate 11 on theside opposite the wafer placement surface 11 a, and the first uniformheat plate 11 and the insulated resistance heating element 13 may bevacuum-suctioned together. The adhesion between the first uniform heatplate 11 and the second uniform heat plate 12 via the insulatedresistance heating element 13 is further improved by combining thesebonding means, and the heat transfer rate can therefore be furtherimproved.

Although it is more difficult to mechanically process than the firstuniform heat plate 11, the surface of the second uniform heat plate 12facing the insulated resistance heating element 13 may be provided witha groove, hole, or other concavity for vacuum-suction, and the seconduniform heat plate 12 and the insulated resistance heating element 13may be vacuum-suctioned together. A plurality of integrated insulatedresistance heating elements 13 may be stacked and sandwiched between thefirst uniform heat plate 11 and the second uniform heat plate 12.Thereby, the rate of temperature increase can be increased, andresistance heating elements having different metal foil patterns can bestacked to make more precise temperature control possible. FIG. 2 showsan example in which two insulated resistance heating elements 13 arestacked.

The wafer placement surface 11 a of the first uniform heat plate 11preferably has a surface roughness Ra of 0.5 μm or less. This is becauseif this value exceeds 0.5 μm, it will be difficult, during the probingof a semiconductor element which generates a large amount of heat, forthe heat generated by the semiconductor element itself to besatisfactorily transferred to the first uniform heat plate 11, and thereis a risk that the temperature of the semiconductor element will be toohigh, causing thermal fracture. It is more preferable that the surfaceroughness Ra be 0.02 μm or less because heat can be radiated moreefficiently.

After the heater unit 10 has been assembled by bonding the first uniformheat plate 11 and the second uniform heat plate 12 together via theinsulated resistance heating element 13, the entire heater unit 10 maybe heat treated so as to have a heat history in a temperature range(e.g., room temperature to 300° C.) encompassing the temperature rangein which the heater unit is actually used. This heat treatment of theheater unit 10 can be performed in a simple manner by causing theinsulated resistance heating element 13 provided to the heater unit 10to generate heat.

Thus, by adding a heat history to the heater unit 10 in advance, themetal uniform heat plate can be made to almost perfectly conform to theother uniform heat plate made of a ceramic or a metal-ceramic compositematerial, and the when the heater unit is subsequently actually used,the flatness in the placement surface 11 a of the first uniform heatplate 11 remains substantially unchanged. Consequently, a heater unit 10of extremely high reliability can be created.

It is preferable that the heater unit 10 be provided with a temperaturesensor 40 as shown in FIG. 1. It is thereby possible to control thetemperature with a high degree of precision during the heating of thewafer. The method of installing the temperature sensor 40 is notparticularly limited, but when a thermocouple is used, for example, aconcavity is preferably provided in the first uniform heat plate 11 sothat the distal end of the thermocouple reaches into the first uniformheat plate 11 to a predetermined position, and it is preferable thatthrough-holes be provided in the insulated resistance heating element 13and the second uniform heat plate 12 at positions corresponding to theconcavity and the temperature sensor 40 be passed through thethrough-holes.

There are also cases in which the heater unit 10 is provided with abypass hole for allowing the cable of the temperature sensor to passthrough, a through-hole for a lifter pin for lifting up the substrate, ahole for allowing the passage of a cable for energizing the resistanceheating element 13, and the like. In such cases, airtightness can beensured by providing O-rings or other vacuum-sealing members so as toencircle these holes.

The mobile cooling plate 20 is provided at the bottom of the heater unit10. This mobile cooling plate 20 separates from the heater unit 10 asshown in FIG. 3A when the wafer is heated, and comes in contact with theheater unit 10 as shown in FIG. 3B when the wafer is cooled. Rapidtemperature increase and rapid cooling of the heater unit 10 are therebymade possible, and throughput can be improved.

When the heater unit 10 is used in an inspection apparatus such as awafer prober, the mobile cooling plate 20 is separated from the heaterunit 10 during probing, whereby the pressure of the probe card can beentirely prevented from reaching the mobile cooling plate 20.Consequently, the mobile cooling plate 20 can have a simple andlightweight structure. An air cylinder or another raising/lowering meanscan be used as the method for driving the mobile cooling plate 20.

A soft member (not shown) having deforming capability, heat resistance,and a high thermal conductivity may be provided between the heater unit10 and the mobile cooling plate 20. It is thereby possible to alleviatethe problem with flatness or warpage in the opposing surfaces of theheater unit 10 and mobile cooling plate 20 as well as the resultingproblem with heat transfer resistance. As a result, the original coolingcapacity of the mobile cooling plate 20 can be achieved at its maximumlimit, and the heater unit 10 can therefore be cooled more rapidly.

Possible examples that can be used for the material of this soft memberinclude a silicon resin; epoxy, phenol, polyimide, or anotherheat-resistant resin; or BN, silica, AlN, or another filler dispersed inthese resins in order to improve thermal conductivity. Alternatively, afoamed metal may be used.

The material of the mobile cooling plate 20 is not particularlyrestricted, and aluminum, copper, or an alloy thereof is preferred. Thisis because these metals have comparatively high thermal conductivity andcan therefore absorb the heat of the heater unit 10 rapidly. Stainlesssteel, a magnesium alloy, nickel, or another metal material may also beused. Furthermore, in order to provide oxidation resistance to themobile cooling plate 20, a metal film having oxidation resistance, suchas nickel, gold, or silver may be formed using plating, spraying, oranother method.

A ceramic may also be used as the material of the mobile cooling plate20. In this case, the material is not particularly limited, but aluminumnitride or silicon carbide is preferred. This is because these materialshave comparatively high thermal conductivities and can therefore quicklyabsorb the heat of the heater unit 10. Alternatively, silicon nitride oraluminum oxynitride may be used. This is because these materials havehigh mechanical strength and excellent durability. Furthermore,comparatively inexpensive alumina, cordelite, steatite, and other oxideceramics may be used.

Since the material of the mobile cooling plate 20 can be selected fromvarious options as described above, the material can be selectedaccording to its application. Of these examples, aluminum treated withalumite and copper plated with nickel are preferred for the excellentoxidation resistance, high thermal conductivity, and comparatively lowprice.

A refrigerant can also be flowed to the mobile cooling plate 20. Forexample, referring to FIG. 10, an example of a heating and coolingdevice is shown in a schematic sectional view, the device comprising thecooling plate 20 below the heater unit 10 (i.e., below the seconduniform heat plate 12). A refrigerant flow passage 20 a is formed in thecooling plate 20, and cooling water or another refrigerant can be flowedthrough this passage. The cooling plate 20 can be driven up and down bya raising/lowering mechanism (not shown) composed of an air cylinder orthe like, and can be brought in contact with/separated from the heaterunit 10.

Since the heat transmitted from the heater unit 10 can thereby bequickly expelled out of the system, the system can be cooled morerapidly. The type of refrigerant is not limited, but water, Fluorinert,or another refrigerant is preferred, and water is more preferred whentaking its high specific heat or price into account.

The mobile cooling plate 20 of FIG. 7 is cooled directly by therefrigerant flowing through the refrigerant passage, but another optionis to not form a refrigerant passage in the cooling plate 20 and toperform cooling indirectly using a cooling module. In this case, thecooling plate 20 is cooled by coming in contact with a cooling moduleprovided at the bottom of the cooling plate 20 when the cooling plate 20is separated from the heater unit 10 and lowered. That is, a refrigerantpassage is formed in the cooling module and refrigerant is flowedthrough this passage, whereby the cooling plate 20 can be indirectlycooled to a predetermined temperature.

A mobile cooling plate 20 having a structure through which refrigerantflows is formed by preparing two copper (oxygen-free copper) plates, forexample, and mechanically processing a flow passage through which waterflows in one of the copper plates. In this copper plate, the othercopper plate and a stainless steel pipe for letting refrigerant in andout are bonded together by soldering. To improve the corrosionresistance and oxidation resistance of the two bonded copper plates, thecopper plates can be prepared by forming nickel plating over theirentire surfaces.

Alternatively, as another structure for allowing the flow ofrefrigerant, a pipe allowing the flow of refrigerant may be installed inan aluminum plate, a copper plate, or another cooling plate. In thiscase, the cooling efficiency can be further improved by forming acounterbore groove having a shape similar to the cross-sectional shapeof the pipe in the cooling plate and firmly adhering the pipe into thegroove. To improve adhesion, a resin, ceramic, or another materialhaving high thermal conductivity may be provided between the pipe andthe cooling plate.

The heater unit 10 and the mobile cooling plate 20 are preferablyaccommodated in a container 30 composed of stainless steel or the likefor shielding the heat of the heater unit 10 from easily transferring toother production apparatuses (FIG. 1, for example). In this case, thecooling plate 20 and the container 30 are provided with through-holesfor passing through a support rod for supporting the heater unit 10,power supply wiring, and a temperature sensor.

In the first embodiment of the present invention, a support member (notshown) is preferably provided in order to ensure that the heat producedin the heater unit 10 is not transferred to components located below theheating and cooling device 1. The shape of this support member is notparticularly restricted, but the support member is preferably not indirect contact with the insulated resistance heating element 13. Forexample, a structure is preferred in which the bottom surface of thesecond uniform heat plate 12 is directly supported by a plurality ofsupport columns arranged in a radial pattern. In this case, depending onthe shape of the mobile cooling plate 20, a through-hole or a recessmust be formed in the cooling plate 20 so that the cooling plate 20 doesnot physically interfere with the support member. The shape and numberof support members are not particularly limited.

The thermal conductivity of the support member is preferably lower thanthe thermal conductivity of the second uniform heat plate 12, i.e., thevalue of K2 previously described. This impedes the heat of the heaterunit 10 from being transferred to the components located below thesupport member, and it is therefore possible to prevent heat from beingtransferred to the components of the drive system used in the positionalalignment of the wafer which is a component located at the bottom, forexample. As a result, thermal expansion of the components of this drivesystem can be prevented, and reductions in the positional alignmentprecision of the wafer or the like can be prevented.

The heating and cooling device 1 having the heater unit 10 and themobile cooling plate 20 is preferably accommodated in the container 30as shown in FIG. 1. Since the lower portion of the heater unit 10 andthe cooling plate 20 can thereby be covered, the lower portion of theheater unit 10 and the cooling plate 20 can therefore be separated fromthe atmosphere of the chamber in which the heating and cooling device 1is installed. Consequently, various adverse effects on the highlyuniform heat properties, the rapid temperature increasing, and the rapidcooling of the heater unit 10 can be suppressed.

The heating and cooling device comprising the heater unit of the firstembodiment of the present invention is capable of rapid temperatureincreases and rapid cooling and has high rigidity in addition to havinghighly uniform heat properties in the wafer placement surface, and it istherefore possible to manufacture high-quality semiconductor elementswith high throughput by installing the heating and cooling device in asemiconductor manufacturing apparatus or a semiconductor elementinspection apparatus.

The second embodiment of the present invention is described hereinbelow.

In the heater unit of the second embodiment of the present invention,the first uniform heat plate and the second uniform heat plate arebonded together so as to be capable of moving relative to each other insubstantially parallel directions in relation to their mutually opposingsurfaces, and between the first uniform heat plate and the seconduniform heat plate, one is composed of a metal and subjected toprocessing intended to provide flexibility to at least one side, whilethe other is composed of a ceramic or a metal-ceramic compositematerial.

FIGS. 4A through 4D show schematic cross-sections of the heater unit 10of the second embodiment. This heater unit 10 comprises a first uniformheat plate 11 having a placement surface 11 a on which a semiconductorsubstrate or a glass substrate is placed, and a second uniform heatplate 12 for supporting the first uniform heat plate 11 from below. Aninsulated resistance heating element 13 made of at least one layer isprovided between the first uniform heat plate 11 and the second uniformheat plate 12. An example in which an insulated resistance heatingelement 13 made of two layers is provided is shown as one example inFIGS. 4A through D. In each of the two layers of the insulatedresistance heating element 13, a resistance heating element 13 a isinsulated by an insulating sheet 13 b.

The material used in the uniform heat plate on which the substrate isplaced is preferably a material having high thermal conductivity. Thereason for this is because the higher the thermal conductivity, thehigher uniform heat properties can be maintained even if the uniformheat plate is thinned, and the heat capacity of the uniform heat platecan therefore be kept small to increase the rate of temperatureincrease. In view of this, the uniform heat plate is preferably formedfrom only a metal having high thermal conductivity, but since metalshave low Young's moduli, they warp readily when formed thin, they warpreadily depending on heat history such as temperature raising andlowering, and it has not been possible to thin the uniform heat plate.

Because of this, in the second embodiment of the present invention, thefirst uniform heat plate 11 and the second uniform heat plate 12 as usedas uniform heat plates, wherein one is formed from a metal materialwhile the other is formed from a ceramic or a metal-ceramic compositematerial. It is thereby possible for these materials to exhibit theirspecial functions, and excellent uniform heat plates can therefore beobtained which have the advantages of both materials. In other words, inthe first embodiment previously described, the materials of the firstuniform heat plate 11 and the second uniform heat plate 12 were a metaland a ceramic or a metal-ceramic composite material, respectively,whereas in Embodiment 2, the materials may be the above combination usedin the first embodiment as well as may be a ceramic or a metal-ceramiccomposite material for the first uniform heat plate 11 and a metal forthe second uniform heat plate 12.

Since the metal is characterized by its high thermal conductivity inparticular, the function of uniform heat properties obtained thereby canbe exhibited in one of the uniform heat plates. Since the ceramic ormetal-ceramic composite material is characterized by its high rigidityand low thermal expansion, the function of maintaining flatness duringtemperature increasing and decreasing obtained thereby can be exhibitedin the other uniform heat plate. These two uniform heat plates arebonded together via the insulated resistance heating element, whereby itis possible to simultaneously achieve the various characteristics thatcannot be achieved with one uniform heat plate alone, i.e., highlyuniform heat properties, a high degree of flatness which does notreadily change even during temperature increases and decreases, and fasttemperature increasing and decreasing properties due to thinning.

For example, the first uniform heat plate 11 which has the placementsurface 11 a may be formed from a metal, and the second uniform heatplate 12 may be formed from a ceramic or a metal-ceramic compositematerial, as shown in FIGS. 4A and B; or the first uniform heat plate 11may be formed from a ceramic or a metal-ceramic composite material whilethe second uniform heat plate 12 is formed from a metal as shown inFIGS. 4C and D. In FIGS. 4A through D, the processing for providingflexibility as will be described hereinafter is performed either on theopposing surfaces of the first uniform heat plate 11 and the seconduniform heat plate 12 or on the sides opposite these surfaces.

Forming the first uniform heat plate 11 having the placement surface 11a from a metal has an advantage in that it is easy to perform processeson the first uniform heat plate 11 itself, such as vacuous grooveprocessing for suctioning the substrate usually formed on the placementsurface 11 a, for example. Forming the first uniform heat plate 11 froma ceramic or a metal-ceramic composite material has an advantage in thatthe first uniform heat plate 11 has high rigidity, therefore there islittle deformation from processing and high-precision processing iseasier.

In either case, the first uniform heat plate 11 and the second uniformheat plate 12 are preferably formed from materials having high thermalconductivities. The reason for this is because, as previously described,the higher the thermal conductivity, the thinner the uniform heat platecan be made. Particularly, the uniform heat plates preferably havethermal conductivities of 150 W/mK or greater. It is more preferably 200W/mK or greater when the uniform heat plate is made of metal. Possibleexamples of metals that satisfy this condition include Cu, Al, andalloys containing these metals.

A uniform heat plate made from a ceramic or a metal-ceramic compositematerial preferably has a Young's modulus of 200 GPa or greater. This isbecause the higher the Young's modulus, the more the uniform heat platecan be thinned. Possible examples of the ceramic include AlN, SiC,alumina, silicon nitride, and composites of these ceramics. Possibleexamples of the metal-ceramic composite material include composites ofSi, Al, or another metal, and silicon carbide, MN, or another ceramic.It is preferable to use a composite of Si and silicon carbide, acomposite of Al and silicon carbide, a composite of Si, Al, and siliconcarbide, or a composite containing these composites. This is becausethese materials have high thermal conductivities and high Young'smoduli.

When the uniform heat plates are made of metal or a metal-ceramiccomposite material, they may be surface treated with Ni or anothercomparatively hard metal, alumite or another ceramic, or a Teflon-basedor polyimide-based resin or another highly corrosion-resistant material.In addition to improving durability, such a surface treatment canprevent the occurrence of contaminants or particles that would besources of contamination in the semiconductor apparatus or other finalproduct. The same surface treatment may of course also be performed inthe case of a ceramic.

Next, the flexibility provided to the uniform heat plates in the secondembodiment is described.

The uniform heat plate made of metal is subjected to processing forproviding flexibility to at least one side. The uniform heat plate madeof metal thereby readily conforms to the other highly rigid uniform heatplate which is made of a ceramic or a metal-ceramic composite material.That is, even if the metal uniform heat plate undergoes a severe changein temperature, this metal uniform heat plate can elastically deform soas to constantly conform to the opposing surface of the other opposinguniform heat plate. It is apparent that this results in particularlypreferable effects for a heater unit for heating substrate such as theone described hereinbelow.

That is, by subjecting the metal uniform heat plate to processing forproviding flexibility and enabling this uniform heat plate to readilyconform to the other highly rigid uniform heat plate, warping can besuppressed even if the metal uniform heat plate is thinned, flatnessdoes not worsen during temperature increasing and decreasing, and theuniform heat properties consequently do not worsen. Since the metal hashigh thermal conductivity, the uniform heat properties are notcompromised even if the metal is low in thickness. Consequently, sincethe metal can be reduced in thickness, the heat capacity is low, andfast temperature increasing and decreasing is possible.

The processing for providing flexibility to the metal uniform heat platecan involve forming concavities N in such forms as notches, recesses,hollows, scratches, incisions, bottomed holes, and through-holes, asshown in FIG. 5. There are no particular restrictions on the depths ofthese concavities N or on the widths, lengths, shapes, or other featuresof the concavities N when the concavities N are viewed from a directionperpendicular to the placement surface of the uniform heat plate, andany desired processing can be used which can provide flexibility.

Nor are there any particular limits on the number (density) ofconcavities N per unit surface area of the placement surface, thedensity distribution, the spaces between adjacent concavities, or otherfactors, which are preferably optimized to an extent which yields theflexibility needed in order to make the uniform heat plate readilyconform to the other uniform heat plate. Among these processingexamples, recesses in particular are preferred. The reason for this isbecause sufficient flexibility can be provided by processing a smallnumber of recesses, and the processing can also be performedinexpensively. The processing of such recesses can be performed bymechanical cutting, for example.

The concavities N for providing flexibility may be provided to one sidealone of the metal uniform heat plate as in FIGS. 4A and 4B in which thefirst uniform heat plate 11 is made of metal or FIGS. 4C and 4D in whichthe second uniform heat plate 12 is made of metal, or the concavities Nmay be provided to both sides of the metal uniform heat plate as in FIG.6 in which the first uniform heat plate 11 is made of metal. When theconcavities N are provided to both sides of the uniform heat plate,concavities N for providing flexibility to the side facing the otheruniform heat plate can be used as grooves for vacuum-suction, describedhereinafter.

Furthermore, if the metal uniform heat plate provided with concavities Non both sides is the first uniform heat plate 11, concavities N forproviding flexibility in the side with the placement surface 11 a canalso be used as grooves for suctioning the substrate as previouslydescribed.

Furthermore, the metal uniform heat plate is preferably appropriatelyheat treated at a temperature equal to or greater than the temperatureneeded to anneal the metal. For example, when Cu is used for the metaluniform heat plate, the temperature needed to anneal Cu is approximately380° C., and a heat treatment is therefore preferably performed forkeeping the Cu uniform heat plate at 400 to 450° C. for 15 minutes to 8hours. The metal uniform heat plate thereby conforms to the otheruniform heat plate made of a ceramic or a metal-ceramic compositematerial even more readily.

The thickness of the metal uniform heat plate in the second embodimentis preferably equal to or less than the thickness of the uniform heatplate made of a ceramic or a metal-ceramic composite material. This isbecause thinning the metal uniform heat plate as much as possible makesthis uniform heat plate conform more readily to the plate surface of theuniform heat plate made of a rigid ceramic or a metal-ceramic compositematerial. The uniform heat plate made of a ceramic or a metal-ceramiccomposite material is preferably thick enough to ensure rigidity.

Due to the thickness of the metal uniform heat plate being equal to orless than the thickness of the uniform heat plate made of a ceramic or ametal-ceramic composite material, the metal uniform heat plate conformsmore readily to the plate surface of the uniform heat plate made of arigid ceramic or a metal-ceramic composite material. Consequently, thehighly uniform heat properties and the excellent flatness can bemaintained, the total thickness of the heater unit can be reduced, thetotal heat capacity can be suppressed, and the temperature can thereforebe increased and decreased quickly.

The insulated resistance heating element 13, the resistance heatingelement 13 a, the insulating sheet 13 b, the temperature sensor 40, thesupport member, the container (30), the bypass hole for allowing passageof the cable of the temperature sensor provided to the heater unit 10,the through-hole for the lifter pin for lifting up the substrate, andhole for allowing passage of the cable for energizing the insulatedresistance heating element 13, the soft member, and other components canbe the same as those described in the first embodiment.

In the second embodiment of the present invention, the first uniformheat plate 11 and the second uniform heat plate 12 facing each other viathe insulated resistance heating element 13 are bonded together so as tobe capable of moving relative to each other in substantially paralleldirections in relation to their opposing surfaces, whereby the oneuniform heat plate made of metal can conform to the other uniform heatplate made of a ceramic or a metal-ceramic composite material even whenthe temperature changes. Possible examples of the method for bondingthese uniform heat plates together in a manner that allows them to moverelative to each other in substantially parallel directions relative totheir opposing surfaces include a method of bonding using vacuum-suctionmeans, and bonding method that uses bonding means combining screws andbearings.

To specifically describe the method of bonding using vacuum-suctionmeans, a groove or another concavity is formed in the surface of thefirst uniform heat plate 11 facing the insulated resistance heatingelement 13, and furthermore, through-holes running into the space formedby this concavity are formed in the insulated resistance heating element13 and the second uniform heat plate 12. The insulated resistanceheating element 13 and the first uniform heat plate 11 can bevacuum-suctioned together by vacuuming this space via the through-holesby a vacuum pump or other vacuum-creating means. The vacuum suctionbetween the second uniform heat plate 12 and the insulated resistanceheating element 13 can also be accomplished by vacuuming via the grooveor other concavity and through-hole formed in the second uniform heatplate 12.

To specifically describe the bonding method that uses bonding meanscombining screws and bearings, a screw hole 11 b is formed in thesurface of the first uniform heat plate 11 that faces the insulatedresistance heating element 13 as shown in FIG. 8A, for example, andthrough-holes are formed in positions corresponding to the screw hole 11b in the second uniform heat plate 12 and the insulated resistanceheating element 13. The first uniform heat plate 11 and the seconduniform heat plate 12 are then mechanically bonded together using ascrew 14 threaded into the screw hole 11 b of the first uniform heatplate 11.

Bearing grooves 14 a are provided in the bearing surface of the head ofthe screw 14, and bearing balls 15 are held in these bearing grooves 14a. The head of the screw 14 is thereby able to move in the direction ofthe surface of the second uniform heat plate 12 that is parallel to thebearing surface. The bearing structure is not limited to this structure;bearing grooves 12 a may be provided in locations in the second uniformheat plate 12 that face the bearing surface of the head of the screw 14,while the bearing balls 15 are held in these bearing grooves 12 a asshown in FIG. 8B, for example.

In the vacuum suction method or the method of bonding using a methodcombining screws and bearings such as those described above, the firstuniform heat plate 11 and the insulated resistance heating element 13can be made to slide against each other in their bordering surfaces. Thesecond uniform heat plate 12 and the insulated resistance heatingelement 13 can also be made to slide against each other in theirbordering surfaces. In the case of two or more insulated resistanceheating elements 13, the heat elements insulating each other can be madeto slide in their bordering surfaces. As a result, the difference inthermal expansion between the first uniform heat plate 11 and the seconduniform heat plate 12 can be absorbed. Warping due to the difference inthermal expansion between these components during temperature increasingor decreasing is thus suppressed, whereby satisfactory uniform heatproperties in the placement surface can be ensured.

In the second embodiment of the present invention as previouslydescribed, since the metal uniform heat plate is subjected to processingfor providing flexibility, the metal uniform heat plate more readilyconforms to the uniform heat plate made of a ceramic or a metal-ceramiccomposite material. Consequently, warping caused by the difference inthermal expansion between the first uniform heat plate 11 and the seconduniform heat plate 12 can be reliably suppressed, and satisfactoryuniform heat properties in the placement surface can be ensured.

After the heater unit 10 has been assembled by bonding the first uniformheat plate 11 and the second uniform heat plate 12 together via theinsulated resistance heating element 13, the entire heater unit 10 maybe heat treated so as to have a heat history in a temperature range(e.g., room temperature to 300° C.) encompassing the temperature rangein which the heater unit is actually used. This heat treatment of theheater unit 10 can be performed in a simple manner by causing theinsulated resistance heating element 13 provided to the heater unit 10to generate heat.

Thus, by adding a heat history to the heater unit 10 in advance, themetal uniform heat plate can be made to almost perfectly conform to theother uniform heat plate made of a ceramic or a metal-ceramic compositematerial, and the when the heater unit is subsequently actually used,the flatness in the placement surface 11 a of the first uniform heatplate 11 remains substantially unchanged. Consequently, a heater unit 10of extremely high reliability can be created.

Thus, in the heater unit 10 of the second embodiment of the presentinvention described above, one of the two uniform heat plates is made ofmetal subjected to processing for providing flexibility and this metalplate is also subjected to annealing as necessary, while the otheruniform heat plate is made of a ceramic or a metal-ceramic compositematerial. In addition to these two uniform heat plates being made toface each other via the insulated resistance heating element 13, theheater unit is also characterized in that the two uniform heat platesare bonded together so as to be capable of moving relative to each otherin substantially parallel directions relative to their opposingsurfaces.

It is thereby possible to provide a heater unit having uniform heatproperties, stability of flatness, and fast increases and decreases intemperature, which were not attainable in conventional heater unitscomposed of metal plates alone or heater units composed of ceramics ormetal-ceramic composite materials alone.

After these two uniform heat plates are bonded together via theinsulated resistance heating element, it is also possible to furtherimprove the uniform heat properties and the stability of flatness byheat treating the entire integrated heater unit as necessary.

That is, in cases in conventional practice in which heat resistance isreduced between the placement stand for placing a semiconductor wafer oranother substrate and the cooling plate for cooling this placementstand, for example, methods for securely fixing these two componentstogether across nearly their entire opposing surfaces have been used,these methods using either an adhesive or screws or other bonding means.However, with these methods, there have been instances ofbimetal-derived warping during increases and decreases in temperature,as a result of the difference in thermal expansion between the placementstand and the cooling plate. As a result, there have been instances inwhich the flatness maintained at room temperature worsens and theuniform heat properties of the substrate placed on the placement surfaceworsen severely.

As a countermeasure to this, in the heater unit of the second embodimentof the present invention, performing a process or treatment which makesone uniform heat plate conform readily to the other uniform heat plateas previously described makes it possible to continually keep theflatness of the placement surface substantially constant, not only atroom temperature but during temperature increases and decreases as well.The bonding of the two uniform heat plates via the insulated resistanceheating element is not limited to the above-described vacuum suction,the method combining screws and bearings, or adhesion or fusion usingthe flexible insulating sheet described above. Any desired bonding meanscan be used if the bonding allows the one uniform heat plate to deformso as to conform to the other uniform heat plate when the temperature ofthe heater unit is increased or decreased.

When heating and cooling are alternately repeated by the insulatedresistance heating element 13 and the mobile cooling plate 20 describedhereinafter in a state in which the first uniform heat plate 11 and thesecond uniform heat plate 12 are bonded together via the insulatedresistance heating element 13, the surface of the first uniform heatplate 11 in contact with the insulated resistance heating element 13conforms to the shape of the surface of the second uniform heat plate 12in contact with the insulated resistance heating element 13 regardlessof the insulated resistance heating element 13 being located between thetwo sheets, as previously described. In other words, the surface of theformer deforms along the surface of the latter.

As a result, if the surface of the second uniform heat plate 12 incontact with the insulated resistance heating element 13 has poorflatness, the flatness of the surface of the first uniform heat plate 11in contact with the insulated resistance heating element 13 is alsoworsened, and the effect of this causes the flatness of the placementsurface 11 a of the first uniform heat plate 11 to worsen. Thereby,there is a risk of the uniform heat properties being reduced in theplacement surface 11 a. To avoid such problems, the flatness of thesurface of the second uniform heat plate 12 in contact with theinsulated resistance heating element 13 is preferably 100 μm or less,and more preferably 50 μm or less. Specifically, if the flatness exceeds100 μm, the flatness of the placement surface 11 a gradually worsens,and there is a risk that the uniform heat properties in the placementsurface 11 a will decrease as well.

Even if the surface of the second uniform heat plate 12 in contact withthe insulated resistance heating element 13 has a flatness of 100 μm orless, the shape of this surface, rather than being upwardly convex,preferably concaves upward, i.e., preferably has a mortar-like shapewherein the substantial center of the surface is caved in. The reasonfor this is because if the surface of the second uniform heat plate 12in contact with the insulated resistance heating element 13 concavesupward, the deformation of the first uniform heat plate 11 along thisshape progresses smoothly, and the effect of the decrease in uniformheat properties in the placement surface 11 a can therefore be reduced.The term “flatness of the surface” refers to the distance between twoother flat surfaces parallel to each other on either sides of the firstsurface, wherein the two flat surfaces are envisioned as having theshortest possible distance separating them from each other.

In the heater unit 10 of the second embodiment of the present invention,when the first uniform heat plate 11 and the second uniform heat plate12 are bonded together by vacuum suction as previously described, avacuum-sealing member is preferably included in order to strengthen thevacuum suction. This vacuum-sealing member is preferred because theadherence can be improved by providing the vacuum-sealing member aroundthe external peripheries of both the first uniform heat plate 11 and thesecond uniform heat plate 12.

For example, a possible specific example of a structure comprising avacuum-sealing member is a structure in which a vacuum-sealing member isformed by an annular elastic member 16 a, and this elastic member 16 ais provided in a portion facing flanges provided in the externalperipheries of both the first and second uniform heat plates 11, 12, asshown in FIG. 9A. The airtightness of the space formed from the firstuniform heat plate 11 and the second uniform heat plate 12 facing eachother can thereby be further improved.

Alternatively, an annular elastic member 16 b may be provided around theexternal peripheral surfaces of the first uniform heat plate 11 and thesecond uniform heat plate 12 so as to encircle the external edges of theopposing sides of the first uniform heat plate 11 and the second uniformheat plate 12, as shown in FIG. 9B. In the cases of both elastic members16 a, 16 b, their inside diameters are preferably smaller than theoutside diameters of the first uniform heat plate 11 and the seconduniform heat plate 12 when no stress is being applied to the annularelastic members 16 a, 16 b. The airtightness between the elastic members16 a, 16 b and the first and second uniform heat plates 11, 12 canthereby be increased before vacuuming.

As yet another specific example, the external peripheries of theopposing surfaces of the first uniform heat plate 11 and the seconduniform heat plate 12 can have grooves processed therein which face eachother across the entire peripheries as shown in FIG. 9C, and an O-ringor another seal member 16 c can be fitted into these grooves to increasethe airtightness of the space formed when the uniform heat plates faceeach other. In this case, an airtight seal is easily formed by fasteningthe center vicinities of the first and second uniform heat plates 11, 12together by a screw or another bonding means.

As in the first embodiment, a heating and cooling device can be createdby providing a cooling plate as necessary underneath the heater unit 10of the second embodiment. The cooling plate can be the same mobilecooling plate described in the first embodiment.

As described above, in the heater unit of the second embodiment, whichhas a structure in which a metal uniform heat plate and a uniform heatplate made of a ceramic or a metal-ceramic composite material are bondedtogether via an insulated resistance heating element so as to be capableof moving relative to each other in directions substantially parallel totheir opposing surfaces, the metal uniform heat plate is subjected toprocessing for providing flexibility, and a heat treatment is performedas necessary on the metal uniform heat plate prior to bonding or on theheater unit after it has been integrated. As a result, the metal uniformheat plate readily conforms to the uniform heat plate made of a ceramicor a metal-ceramic composite material, and, consequently, a state ofadherence can constantly be maintained between these two uniform heatplates across almost their entire opposing surfaces, even when thetemperature is repeatedly increased and decreased by the resistanceheating element or the cooling plate.

Thereby, compared with conventional examples in which methods forsecurely fixing two members of different materials together using anadhesive or the like with the intention of reducing heat resistance,heating and cooling can be performed quickly without increasing heatresistance, and it is possible to reduce the bimetal-induced warpingresulting from the difference in thermal expansion between the top andbottom uniform heat plates, even in conditions of severe temperaturechanges during rapid heating or rapid cooling. As a result, highlyuniform heat properties can be constantly maintained in the substrateplaced on the placement surface.

The third embodiment of the present invention is achieved by combiningthe characteristics of the first embodiment and the second embodiment.For example, the third embodiment of the present invention uses thefirst uniform heat plate and the second uniform heat plate used in thefirst embodiment (i.e., the first uniform heat plate which has theplacement surface for placing the substrate, and the second uniform heatplate which supports the first uniform heat plate, wherein the thermalconductivities of the first uniform heat plate and second uniform heatplate, denoted as K1 and K2 respectively have the relationship K1>K2,and the Young's moduli of the first uniform heat plate and seconduniform heat plate, denoted as Y1 and Y2 respectively, have therelationship Y2>Y1), and the first uniform heat plate and second uniformheat plate are bonded together so as to be capable of moving relative toeach other in directions substantially parallel to their opposingsurfaces.

According to the third embodiment, one of either the first uniform heatplate and the second uniform heat plate may be made from metal andsubjected to processing for providing flexibility to at least one side,while the other may be made from a ceramic or a metal-ceramic compositematerial.

According to the third embodiment, among the first uniform heat plateand the second uniform heat plate, the thickness of the one made ofmetal may be equal to or less than the thickness of the other made of aceramic or a metal-ceramic composite material.

In the second uniform heat plate, the shape of the surface in contactwith the insulated resistance heating element may be upwardly concave.

The bond allowing for relative movement may be a bond accomplished byvacuum-suction means or a bond accomplished by bonding means combiningscrews and bearings.

A vacuum-sealing member used for the vacuum-suction means may also beprovided.

The vacuum-sealing member may be disposed in the vicinity of theexternal peripheries of the first uniform heat plate and the seconduniform heat plate.

The insulated resistance heating element is formed by integrating aresistance heating element and a heat-resistant insulator, and theheat-resistant insulator may be a heat-resistant insulator whose primaryconstituent is polyimide or Teflon, or both.

In the third embodiment, the insulated resistance heating element 13,the resistance heating element 13 a, the insulating sheet 13 b, thetemperature sensor 40, the support member, the container (30), thebypass hole for allowing passage of the cable of the temperature sensorprovided to the heater unit 10, the through-hole for the lifter pin forlifting up the substrate, and hole for allowing passage of the cable forenergizing the insulated resistance heating element 13, the soft member,and other components can be the same as those described in the firstembodiment.

With the heater unit of the first through third embodiments describedabove, manufacturing or inspection apparatus for semiconductorsubstrates or glass substrates for flat panel displays including theheater unit can be manufactured. Manufacturing or inspection devices canalso be manufactured for semiconductor substrates or glass substratesfor flat panel displays which include a heating and cooling devicecomprising the heater unit and the mobile cooling plate of the firstthrough third embodiments.

These manufacturing and inspection apparatuses are capable of performingheating and cooling quickly without increasing heat resistance, and ofreducing the bimetal-induced warping resulting from the difference inthermal expansion between the top and bottom uniform heat plates, evenin conditions of severe temperature changes during rapid heating orrapid cooling. As a result, highly uniform heat properties can beconstantly maintained in the substrate placed on the placement surface.

The heater unit of the present invention, the heating and cooling deviceincluding this heater unit, and the inspection apparatus ormanufacturing apparatus comprising these were described above based onembodiments, but the present invention is not limited to theseembodiments, and it should be understood that various modifications arepossible within a range that does not deviate from the scope of thepresent invention. That is, the technological scope of the presentinvention encompasses the scope of the claims and equivalent items.

WORKING EXAMPLES

The first embodiment of the present invention is shown hereinbelow inWorking Examples (1)-1 through (1)-11.

Working Example (1)-1

A heater unit 10 of Sample 1 was prepared, composed of the first uniformheat plate 11, the second uniform heat plate 12, and the insulatedresistance heating element 13 shown in FIG. 1. A plate-shaped membermade of copper, 2 mm in thickness (A1) and 340 mm in diameter (B), wasused for the first uniform heat plate 11. A plate-shaped member made ofa Si—SiC composite, 2 mm in thickness (A2) and 340 mm in diameter, wasused for the second uniform heat plate 12. A plating of Ni was formedover the surface of the copper plate-shaped member. Furthermore, theflatness of the side of the first uniform heat plate 11 with the waferplacement surface 11 a was finished to 50 μm, and the flatness of thesurface of the second uniform heat plate 12 in contact with theinsulated resistance heating element 13 was finished to 30 μm.

In the insulated resistance heating element 13, a microfabricated metalfoil composed of stainless steel was integrated with polyimide (PI). Thethickness (C) was 0.15 mm. The insulated resistance heating element 13was secured using screws while held between the first uniform heat plate11 and the second uniform heat plate 12. The heater unit 10 of Sample 1was thereby obtained. Heater units 10 of Samples 2 through 8 wereprepared in the same manner, but the thicknesses of the first uniformheat plate 11 and the second uniform heat plate 12 were varied in thesecases.

A mobile cooling plate 20 was placed at the bottom of the heater unit 10in each of Samples 1 through 8.

The mobile cooling plate 20 was formed by mechanically processing a flowpassage for flowing water as a refrigerant through each of two copperplates having 10 mm in thickness and 340 mm in diameter, bonding the twoplates together by soldering, and attaching refrigerant passageways totheir side surfaces. Nickel platings were formed on the surfaces inorder to ensure heat resistance. The configurations of the heater units10 of these Samples 1 through 8 are shown in Table 1 below.

TABLE 1 First Uniform Second Uniform Resistance Heating Heat Plate HeatPlate Element thickness thickness thickness A1 diameter B A2 type of CA1 + A2 (A1 + A2)/B Sample material (mm) (mm) material (mm) insulator(μm) (mm) (—) 1 Cu 2 340 Si—SiC 2 single PI 150 4 1/85 = 0.012 layer 2Cu 3 340 Si—SiC 3 single PI 150 6 1/57 = 0.018 layer 3 Cu 4 340 Si—SiC 4single PI 150 8 1/43 = 0.024 layer **4 Cu 5 340 Si—SiC 5 single PI 15010 1/34 = 0.029 layer 5 Cu 1 340 Si—SiC 5 single PI 150 6 1/57 = 0.018layer **6 Cu 0.5 340 Si—SiC 5.5 single PI 150 6 1/57 = 0.018 layer 7 Cu5 340 Si—SiC 1 single PI 150 6 1/57 = 0.018 layer **8 Cu 5.5 340 Si—SiC0.5 single PI 150 6 1/57 = 0.018 layer (Note): Samples marked with ** inthe tables are reference examples.

In the heater units 10 of Samples 1 through 8 of Table 1, power wassupplied to the insulated resistance heating elements 13 while themobile cooling plates 20 were separated, heating the elements from roomtemperature to 150° C., after which the power supply to the insulatedresistance heating elements 13 was stopped, and the mobile coolingplates 20 with water flowing through were brought in contact with theheater units 10, cooling them. The uniform heat properties of the waferplacement surfaces 11 a, which had been heated to 150° C., weremeasured. The times required to raise the temperature from 100° C. to150° C. and the times required to cool from 150° C. to 100° C. weremeasured. Furthermore, the changes in the flatness of the waferplacement surfaces 11 a after temperature increase and cooling weremeasured. The results are shown in Table 2 below. The circle symbolindicates that predetermined conditions shown in the table weresatisfied, and the symbol x indicates that these conditions were notsatisfied. As for the manufacturing cost, the circle symbol indicatesthe manufacturing cost lower than that for a conventional heater unitconsisting of one metal layer, and symbol x indicates the manufacturingcost higher than the same.

TABLE 2 Uniform 100 → 150° C. 150 → 100° C. Change In Flatness HeatTemperature Cooling After Temperature Properties ≦ Increase IncreaseIncrease/ Manufacturing Sample 0.5° C. Rate ≦ 100 sec Rate ≦ 50 secCooling ≦ 50 μm Cost 1 ∘ ∘ ∘ ∘ ∘ 2 ∘ ∘ ∘ ∘ ∘ 3 ∘ ∘ ∘ ∘ ∘ ** 4   ∘ x x ∘∘ 5 ∘ ∘ ∘ ∘ ∘ ** 6   severe x x x x warping 7 ∘ ∘ ∘ ∘ ∘ ** 8   cracking,x x x x breakage (Note): Samples marked with ** in the tables arereference examples.

As can be seen from Table 2, satisfactory results for uniform heatproperties, temperature increase rate, cooling rate, change in flatness,and manufacturing cost were achieved for the heater units 10 of Samples1 to 3, 5, and 7. In Sample 4, in which the total (A1+A2) of thethickness (A1) of the first uniform heat plate 11 and the thickness (A2)of the second uniform heat plate 12 exceeded 1/40 of the diameter (B) ofthe first uniform heat plate 11, the temperature increase rate andcooling rate were time-consuming. In Sample 6, in which the thickness(A1) of the first uniform heat plate 11 was less than 1 mm, the firstuniform heat plate 11 was severely warped and measurement could not becontinued. In Sample 8, in which the thickness (A2) of the seconduniform heat plate 12 was less than 1 mm, the second uniform heat plate12 cracked and measurement could therefore not be continued.

Working Examples (1)-2

Other than AlN being used for the material of the second uniform heatplate 12 instead of the Si—SiC composite, heater units 10 of Samples 9through 16 shown in Table 3 below were prepared in the same manner asWorking Example (1)-1.

TABLE 3 First Uniform Second Uniform Resistance Heating Heat Plate HeatPlate Element thickness diameter thickness type of thickness A1 + A2(A1 + A2)/B Sample material A1 (mm) B (mm) material A2 (mm) insulator C(μm) (mm) (—) 9 Cu 2 340 AlN 2 single 150 4 1/85 = 0.012 PI layer 10 Cu3 340 AlN 3 single 150 6 1/57 = 0.018 PI layer 11 Cu 4 340 AlN 4 single150 8 1/43 = 0.024 PI layer **12 Cu 5 340 AlN 5 single 150 10 1/34 =0.029 PI layer 13 Cu 1 340 AlN 5 single 150 6 1/57 = 0.018 PI layer **14Cu 0.5 340 AlN 5.5 single 150 6 1/57 = 0.018 PI layer 15 Cu 5 340 AlN 1single 150 6 1/57 = 0.018 PI layer **16 Cu 5.5 340 AlN 0.5 single 150 61/57 = 0.018 PI layer (Note): Samples marked with ** in the tables arereference examples.

In the heater units 10 of Samples 9 through 16 of Table 3, mobilecooling plates 20 were placed at the bottom in the same manner as inWorking Example (1)-1, and temperature increasing and cooling wereperformed to measure uniform heat properties and the like in the samemanner as in Working Example (1)-1. The results are shown in Table 4below. The circle symbol indicates that predetermined conditions shownin the table were satisfied, and the symbol x indicates that theseconditions were not satisfied.

TABLE 4 Uniform 100 → 150° C. 150 → 100° C. Change In Flatness HeatTemperature Cooling After Temperature Properties ≦ Increase IncreaseIncrease/ Manufacturing Sample 0.5° C. Rate ≦ 100 sec Rate ≦ 50 secCooling ≦ 50 μm Cost  9 ∘ ∘ ∘ ∘ ∘ 10 ∘ ∘ ∘ ∘ ∘ 11 ∘ ∘ ∘ ∘ ∘ ** 12   ∘ xx ∘ ∘ 13 ∘ ∘ ∘ ∘ ∘ ** 14   severe x x x x warping 15 ∘ ∘ ∘ ∘ ∘ ** 16  cracking, x x x x breakage (Note): Samples marked with ** in the tablesare reference examples.

It is clear from Table 4 that the same results as those of WorkingExample (1)-1 were achieved even through AlN was used as the material ofthe second uniform heat plate 12.

Working Example (1)-3

Other than SiC being used for the material of the second uniform heatplate 12 instead of the Si—SiC composite, heater units 10 of Samples 17through 24 shown in Table 5 below were prepared in the same manner asWorking Example (1)-1.

TABLE 5 First Uniform Second Uniform Resistance Heating Heat Plate HeatPlate Element thickness diameter thickness type of thickness A1 + A2(A1 + A2)/B Sample material A1 (mm) B (mm) material A2 (mm) insulator C(μm) (mm) (—) 17 Cu 2 340 SiC 2 single 150 4 1/85 = 0.012 PI layer 18 Cu3 340 SiC 3 single 150 6 1/57 = 0.018 PI layer 19 Cu 4 340 SiC 4 single150 8 1/43 = 0.024 PI layer **20 Cu 5 340 SiC 5 single 150 10 1/34 =0.029 PI layer 21 Cu 1 340 SiC 5 single 150 6 1/57 = 0.018 PI layer **22Cu 0.5 340 SiC 5.5 single 150 6 1/57 = 0.018 PI layer 23 Cu 5 340 SiC 1single 150 6 1/57 = 0.018 PI layer **24 Cu 5.5 340 SiC 0.5 single 150 61/57 = 0.018 PI layer (Note): Samples marked with ** in the tables arereference examples.

In the heater units 10 of Samples 17 through 24 of Table 5, mobilecooling plates 20 were placed at the bottom in the same manner as inWorking Example (1)-1, and temperature increasing and cooling wereperformed to measure uniform heat properties and the like in the samemanner as in Working Example (1)-1. The results are shown in Table 6below. The circle symbol indicates that predetermined conditions shownin the table were satisfied, and the symbol x indicates that theseconditions were not satisfied.

TABLE 6 Uniform 100 → 150° C. 150 → 100° C. Change In Flatness HeatTemperature Cooling After Temperature Properties ≦ Increase IncreaseIncrease/ Manufacturing Sample 0.5° C. Rate ≦ 100 sec Rate ≦ 50 secCooling ≦ 50 μm Cost 17 ∘ ∘ ∘ ∘ ∘ 18 ∘ ∘ ∘ ∘ ∘ 19 ∘ ∘ ∘ ∘ ∘ ** 20   ∘ xx ∘ ∘ 21 ∘ ∘ ∘ ∘ ∘ ** 22   severe x x x x warping 23 ∘ ∘ ∘ ∘ ∘ ** 24  cracking, x x x x breakage (Note): Samples marked with ** in the tablesare reference examples.

It is clear from Table 6 that the same results as those of WorkingExample (1)-1 were achieved even through SiC was used as the material ofthe second uniform heat plate 12.

Working Example (1)-4

Other than an Al—SiC composite being used for the material of the seconduniform heat plate 12 instead of the Si—SiC composite, heater units 10of Samples 25 through 32 shown in Table 7 below were prepared in thesame manner as Working Example (1)-1.

TABLE 7 First Uniform Second Uniform Resistance Heating Heat Plate HeatPlate Element thickness diameter thickness type of thickness A1 + A2(A1 + A2)/B Sample material A1 (mm) B (mm) material A2 (mm) insulator C(μm) (mm) (—) 25 Cu 2 340 Al—SiC 2 single 150 4 1/85 = 0.012 PI layer 26Cu 3 340 Al—SiC 3 single 150 6 1/57 = 0.018 PI layer 27 Cu 4 340 Al—SiC4 single 150 8 1/43 = 0.024 PI layer **28 Cu 5 340 Al—SiC 5 single 15010 1/34 = 0.029 PI layer 29 Cu 1 340 Al—SiC 5 single 150 6 1/57 = 0.018PI layer **30 Cu 0.5 340 Al—SiC 5.5 single 150 6 1/57 = 0.018 PI layer31 Cu 5 340 Al—SiC 1 single 150 6 1/57 = 0.018 PI layer **32 Cu 5.5 340Al—SiC 0.5 single 150 6 1/57 = 0.018 PI layer (Note): Samples markedwith ** in the tables are reference examples.

In the heater units 10 of Samples 25 through 32 of Table 7, mobilecooling plates 20 were placed at the bottom in the same manner as inWorking Example (1)-1, and temperature increasing and cooling wereperformed to measure uniform heat properties and the like in the samemanner as in Working Example (1)-1. The results are shown in Table 8below. The circle symbol indicates that predetermined conditions shownin the table were satisfied, and the symbol x indicates that theseconditions were not satisfied.

TABLE 8 Uniform 100 → 150° C. 150 → 100° C. Change In Flatness HeatTemperature Cooling After Temperature Properties ≦ Increase IncreaseIncrease/ Manufacturing Sample 0.5° C. Rate ≦ 100 sec Rate ≦ 50 secCooling ≦ 50 μm Cost 25 ∘ ∘ ∘ ∘ ∘ 26 ∘ ∘ ∘ ∘ ∘ 27 ∘ ∘ ∘ ∘ ∘ ** 28   ∘ xx ∘ ∘ 29 ∘ ∘ ∘ ∘ ∘ ** 30   severe x x x x warping 31 ∘ ∘ ∘ ∘ ∘ ** 32  cracking, x x x x breakage (Note): Samples marked with ** in the tablesare reference examples.

It is clear from Table 8 that the same results as those of WorkingExample (1)-1 were achieved even through an Al—SiC composite was used asthe material of the second uniform heat plate 12.

Working Example (1)-5

Other than a Al being used for the material of the first uniform heatplate 11 instead of Cu and an alumite treatment being performed insteadof the Ni plating, heater units 10 of Samples 33 through 40 shown inTable 9 below were prepared in the same manner as Working Example (1)-1.

TABLE 9 First Uniform Second Uniform Resistance Heating Heat Plate HeatPlate Element thickness diameter thickness type of thickness A1 + A2(A1 + A2)/B Sample material A1 (mm) B (mm) material A2 (mm) insulator C(μm) (mm) (—) 33 Al 2 340 Si—SiC 2 single 150 4 1/85 = 0.012 PI layer 34Al 3 340 Si—SiC 3 single 150 6 1/57 = 0.018 PI layer 35 Al 4 340 Si—SiC4 single 150 8 1/43 = 0.024 PI layer **36 Al 5 340 Si—SiC 5 single 15010 1/34 = 0.029 PI layer 37 Al 1 340 Si—SiC 5 single 150 6 1/57 = 0.018PI layer **38 Al 0.5 340 Si—SiC 5.5 single 150 6 1/57 = 0.018 PI layer39 Al 5 340 Si—SiC 1 single 150 6 1/57 = 0.018 PI layer **40 Al 5.5 340Si—SiC 0.5 single 150 6 1/57 = 0.018 PI layer (Note): Samples markedwith ** in the tables are reference examples.

In the heater units 10 of Samples 33 through 40 of Table 9, mobilecooling plates 20 were placed at the bottom in the same manner as inWorking Example (1)-1, and temperature increasing and cooling wereperformed to measure uniform heat properties and the like in the samemanner as in Working Example (1)-1. The results are shown in Table 10below. The circle symbol indicates that predetermined conditions shownin the table were satisfied, and the symbol x indicates that theseconditions were not satisfied.

TABLE 10 Uniform 100 → 150° C. 150 → 100° C. Change In Flatness HeatTemperature Cooling After Temperature Properties ≦ Increase IncreaseIncrease/ Manufacturing Sample 0.5° C. Rate ≦ 100 sec Rate ≦ 50 secCooling ≦ 50 μm Cost 33 ∘ ∘ ∘ ∘ ∘ 34 ∘ ∘ ∘ ∘ ∘ 35 ∘ ∘ ∘ ∘ ∘ ** 36   ∘ xx ∘ ∘ 37 ∘ ∘ ∘ ∘ ∘ ** 38   severe x x x x warping 39 ∘ ∘ ∘ ∘ ∘ ** 40  cracking, x x x x breakage (Note): Samples marked with ** in the tablesare reference examples.

It is clear from Table 10 that the same results as those of WorkingExample (1)-1 were achieved even through Al treated with alumite wasused as the material of the first uniform heat plate 11.

Working Example (1)-6

Other than Al being used for the material of the first uniform heatplate 11 instead of Cu, an alumite treatment being performed instead ofthe Ni plating, and AlN being used for the material of the seconduniform heat plate 12 instead of an Si—SiC composite, heater units 10 ofSamples 41 through 48 shown in Table 11 below were prepared in the samemanner as Working Example (1)-1.

TABLE 11 First Uniform Second Uniform Resistance Heating Heat Plate HeatPlate Element thickness diameter thickness type of thickness A1 + A2(A1 + A2)/B Sample material A1 (mm) B (mm) material A2 (mm) insulator C(μm) (mm) (—) 41 Al 2 340 AlN 2 single PI 150 4 1/85 = 0.012 layer 42 Al3 340 AlN 3 single PI 150 6 1/57 = 0.018 layer 43 Al 4 340 AlN 4 singlePI 150 8 1/43 = 0.024 layer **44 Al 5 340 AlN 5 single PI 150 10 1/34 =0.029 layer 45 Al 1 340 AlN 5 single PI 150 6 1/57 = 0.018 layer **46 Al0.5 340 AlN 5.5 single PI 150 6 1/57 = 0.018 layer 47 Al 5 340 AlN 1single PI 150 6 1/57 = 0.018 layer **48 Al 5.5 340 AlN 0.5 single PI 1506 1/57 = 0.018 layer (Note): Samples marked with ** in the tables arereference examples.

In the heater units 10 of Samples 41 through 48 of Table 11, mobilecooling plates 20 were placed at the bottom in the same manner as inWorking Example (1)-1, and temperature increasing and cooling wereperformed to measure uniform heat properties and the like in the samemanner as in Working Example (1)-1. The results are shown in Table 12below. The circle symbol indicates that predetermined conditions shownin the table were satisfied, and the symbol x indicates that theseconditions were not satisfied.

TABLE 12 Uniform 100 → 150° C. 150 → 100° C. Change In Flatness HeatTemperature Cooling After Temperature Properties ≦ Increase IncreaseIncrease/ Manufacturing Sample 0.5° C. Rate ≦ 100 sec Rate ≦ 50 secCooling ≦ 50 μm Cost 41 ∘ ∘ ∘ ∘ ∘ 42 ∘ ∘ ∘ ∘ ∘ 43 ∘ ∘ ∘ ∘ ∘ ** 44   ∘ xx ∘ ∘ 45 ∘ ∘ ∘ ∘ ∘ ** 46   severe x x x x warping 47 ∘ ∘ ∘ ∘ ∘ ** 48  cracking, x x x x breakage (Note): Samples marked with ** in the tablesare reference examples.

It is clear from Table 12 that the same results as those of WorkingExample (1)-1 were achieved even through Al treated with alumite wasused as the material of the first uniform heat plate 11 and AlN was usedas the material of the second uniform heat plate 12.

Working Example (1)-7

Other than Al being used for the material of the first uniform heatplate 11 instead of Cu, an alumite treatment being performed instead ofthe Ni plating, and SiC being used for the material of the seconduniform heat plate 12 instead of an Si—SiC composite, heater units 10 ofSamples 49 through 56 shown in Table 13 below were prepared in the samemanner as Working Example (1)-1.

TABLE 13 First Uniform Second Uniform Resistance Heating Heat Plate HeatPlate Element thickness diameter thickness type of thickness A1 + A2(A1 + A2)/B Sample material A1 (mm) B (mm) material A2 (mm) insulator C(μm) (mm) (—) 49 Al 2 340 SiC 2 single 150 4 1/85 = 0.012 PI layer 50 Al3 340 SiC 3 single 150 6 1/57 = 0.018 PI layer 51 Al 4 340 SiC 4 single150 8 1/43 = 0.024 PI layer **52 Al 5 340 SiC 5 single 150 10 1/34 =0.029 PI layer 53 Al 1 340 SiC 5 single 150 6 1/57 = 0.018 PI layer **54Al 0.5 340 SiC 5.5 single 150 6 1/57 = 0.018 PI layer 55 Al 5 340 SiC 1single 150 6 1/57 = 0.018 PI layer **56 Al 5.5 340 SiC 0.5 single 150 61/57 = 0.018 PI layer (Note): Samples marked with ** in the tables arereference examples.

In the heater units 10 of Samples 49 through 56 of Table 13, mobilecooling plates 20 were placed at the bottom in the same manner as inWorking Example (1)-1, and temperature increasing and cooling wereperformed to measure uniform heat properties and the like in the samemanner as in Working Example (1)-1. The results are shown in Table 14below. The circle symbol indicates that predetermined conditions shownin the table were satisfied, and the symbol x indicates that theseconditions were not satisfied.

TABLE 14 Uniform 100 → 150° C. 150 → 100° C. Change In Flatness HeatTemperature Cooling After Temperature Properties ≦ Increase IncreaseIncrease/ Manufacturing Sample 0.5° C. Rate ≦ 100 sec Rate ≦ 50 secCooling ≦ 50 μm Cost 49 ∘ ∘ ∘ ∘ ∘ 50 ∘ ∘ ∘ ∘ ∘ 51 ∘ ∘ ∘ ∘ ∘ ** 52   ∘ xx ∘ ∘ 53 ∘ ∘ ∘ ∘ ∘ ** 54   severe x x x x warping 55 ∘ ∘ ∘ ∘ ∘ ** 56  cracking, x x x x breakage (Note): Samples marked with ** in the tablesare reference examples.

It is clear from Table 14 that the same results as those of WorkingExample (1)-1 were achieved even through Al treated with alumite wasused as the material of the first uniform heat plate 11 and SiC was usedas the material of the second uniform heat plate 12.

Working Example (1)-8

Other than Al being used for the material of the first uniform heatplate 11 instead of Cu, an alumite treatment being performed instead ofthe Ni plating, and an Al—SiC composite being used for the material ofthe second uniform heat plate 12 instead of an Si—SiC composite, heaterunits 10 of Samples 57 through 64 shown in Table 15 below were preparedin the same manner as Working Example (1)-1.

TABLE 15 First Uniform Second Uniform Resistance Heating Heat Plate HeatPlate Element thickness diameter thickness type of thickness A1 + A2(A1 + A2)/B Sample material A1 (mm) B (mm) material A2 (mm) insulator C(μm) (mm) (—) 57 Al 2 340 Al—SiC 2 single PI 150 4 1/85 = 0.012 layer 58Al 3 340 Al—SiC 3 single PI 150 6 1/57 = 0.018 layer 59 Al 4 340 Al—SiC4 single PI 150 8 1/43 = 0.024 layer **60 Al 5 340 Al—SiC 5 single PI150 10 1/34 = 0.029 layer 61 Al 1 340 Al—SiC 5 single PI 150 6 1/57 =0.018 layer **62 Al 0.5 340 Al—SiC 5.5 single PI 150 6 1/57 = 0.018layer 63 Al 5 340 Al—SiC 1 single PI 150 6 1/57 = 0.018 layer **64 Al5.5 340 Al—SiC 0.5 single PI 150 6 1/57 = 0.018 layer (Note): Samplesmarked with ** in the tables are reference examples.

In the heater units 10 of Samples 57 through 64 of Table 15, mobilecooling plates 20 were placed at the bottom in the same manner as inWorking Example (1)-1, and temperature increasing and cooling wereperformed to measure uniform heat properties and the like in the samemanner as in Working Example (1)-1. The results are shown in Table 16below. The circle symbol indicates that predetermined conditions shownin the table were satisfied, and the symbol x indicates that theseconditions were not satisfied.

TABLE 16 Uniform 100 → 150° C. 150 → 100° C. Change In Flatness HeatTemperature Cooling After Temperature Properties ≦ Increase IncreaseIncrease/ Manufacturing Sample 0.5° C. Rate ≦ 100 sec Rate ≦ 50 secCooling ≦ 50 μm Cost 57 ∘ ∘ ∘ ∘ ∘ 58 ∘ ∘ ∘ ∘ ∘ 59 ∘ ∘ ∘ ∘ ∘ ** 60   ∘ xx ∘ ∘ 61 ∘ ∘ ∘ ∘ ∘ ** 62   severe x x x x warping 63 ∘ ∘ ∘ ∘ ∘ ** 64  cracking, x x x x breakage (Note): Samples marked with ** in the tablesare reference examples.

It is clear from Table 16 that the same results as those of WorkingExample (1)-1 were achieved even through Al treated with alumite wasused as the material of the first uniform heat plate 11 and an Al—SiCcomposite was used as the material of the second uniform heat plate 12.

Working Example (1)-1

For the sake of reference, heating and cooling devices were prepared asSamples 65 through 67 shown in Table 17 below. Specifically, the heatingand cooling device of Sample 65 was prepared in the same manner asSample 2 of Working Example (1)-1, other than AlN being used as thematerial of the first uniform heat plate 11 and copper being used as thematerial of the second uniform heat plate 12. In the heating and coolingdevice of Sample 66, AlN was used as the material of the first uniformheat plate 11, the thickness (A1) of which was 6 mm, and a seconduniform heat plate 12 was not provided. For the resistance heatingelement, a heating element circuit was formed with a tungsten paste byscreen printing on the bottom side of the first uniform heat plate 11,i.e., on the side opposite the wafer placement surface 11 a, and thecircuit was sintered, after which a glass paste for ensuring insulationwas coated over and sintered on the surface of the heating element sothat the thickness of the total of the insulator and the heating elementwas 150 μm. In the heating and cooling device of Sample 67, copper wasused as the material of the first uniform heat plate 11, the thickness(A1) of which was 6 mm, and a second uniform heat plate 12 was notprovided. The insulated resistance heating element 13, which had athickness (C) of 0.15 mm after being integrated with polyimide, wasattached by adhesion to the bottom surface of the first uniform heatplate 11.

TABLE 17 First Uniform Second Uniform Resistance Heating Heat Plate HeatPlate Element thickness diameter thickness formation of thickness A1 +A2 (A1 + A2)/B Sample material A1 (mm) B (mm) material A2 (mm) insulatorC (μm) (mm) (—) **65 AlN 3 340 Cu 3 PI 150 6 1/57 = 0.018 sandwich **66AlN 6 340 — — Printed 150 6 1/57 = 0.018 **67 Cu 6 340 — — PI 150 6 1/57= 0.018 adhesion (Note): Samples marked with ** in the tables arereference examples.

In the heating and cooling devices of Samples 65 through 67 shown inTable 17, mobile cooling plates 20 were placed at the bottom in the samemanner as in Working Example (1)-1, and temperature increasing andcooling were performed to measure uniform heat properties and the likein the same manner as in Working Example (1)-1. The results are shown inTable 18 below. The circle symbol indicates that predeterminedconditions shown in the table were satisfied, and the symbol x indicatesthat these conditions were not satisfied.

TABLE 18 Uniform 100 → 150° C. 150 → 100° C. Change In Flatness HeatTemperature Cooling After Temperature Properties ≦ Increase IncreaseIncrease/ Manufacturing Sample 0.5° C. Rate ≦ 100 sec Rate ≦ 50 secCooling ≦ 50 μm Cost ** 65 x ∘ ∘ ∘ ∘ ** 66 x ∘ ∘ ∘ x ** 67 ∘ x x x ∘(Note): Samples marked with ** in the tables are reference examples.

As can be seen from Table 18, in both of the heating and cooling devicesof Samples 65 and 66, the uniform heat properties at 150° C. exceeded0.5° C. The heating and cooling device of Sample 66 also had a highmanufacturing cost because a step for screen printing the resistanceheating element was required. The heating and cooling device of Sample67 required time for the temperature increase rate and the cooling rate,and the flatness after temperature increasing and cooling had changedmore than 50 μm from the flatness prior to temperature increasing andcooling.

Working Example (1)-9

Heater units 10 were prepared for Samples 68 through 71 shown in Table19 below.

That is, for the heater unit 10 of Sample 68, two layers of integratedand insulated resistance heating elements 13 were stacked so as to havethe structure shown in FIG. 2, but the heater unit was otherwiseprepared in the same manner as Sample 2 of Working Example (1)-1. Forthe heater unit 10 of Sample 69, an insulated resistance heating element13 integrated using Teflon and having a thickness (C) of 0.25 mm wasused, otherwise the heater unit was prepared in the same manner asSample 2 of Working Example (1)-1. For the heater unit 10 of Sample 70,two layers of the insulated resistance heating element 13 used in Sample69 were stacked, otherwise the heater unit was the same as Sample 69.For the heater unit 10 of Sample 71, an insulated resistance heatingelement 13 integrated using mica and having a thickness (C) of 1 mm wasused, otherwise the heater unit was prepared in the same manner asSample 2 of Working Example (1)-1.

TABLE 19 First Uniform Second Uniform Resistance Heating Heat Plate HeatPlate Element thickness diameter thickness type of thickness A1 + A2(A1 + A2)/B Sample material A1 (mm) B (mm) material A2 (mm) insulator C(μm) (mm) (—) 68 Cu 3 340 Si—SiC 3 PI 300 6 1/57 = 0.018 laminate 69 Cu3 340 Si—SiC 3 Single 250 6 1/57 = 0.018 Teflon layer 70 Cu 3 340 Si—SiC3 Teflon 500 6 1/57 = 0.018 laminate **71 Cu 3 340 Si—SiC 3 Mica 1000 61/57 = 0.018 (Note): Samples marked with ** in the tables are referenceexamples.

In the heater units 10 of Samples 68 through 71 shown in Table 19,mobile cooling plates 20 were placed at the bottom in the same manner asin Working Example (1)-1, and temperature increasing and cooling wereperformed to measure uniform heat properties and the like in the samemanner as in Working Example (1)-1. The results are shown in Table 20below. The circle symbol indicates that predetermined conditions shownin the table were satisfied, and the symbol x indicates that theseconditions were not satisfied.

TABLE 20 Uniform 100 → 150° C. 150 → 100° C. Change In Flatness HeatTemperature Cooling After Temperature Properties ≦ Increase IncreaseIncrease/ Manufacturing Sample 0.5° C. Rate ≦ 100 sec Rate ≦ 50 secCooling ≦ 50 μm Cost 68 ∘ ∘ ∘ ∘ ∘ 69 ∘ ∘ ∘ ∘ ∘ 70 ∘ ∘ ∘ ∘ ∘ ** 71   x xx ∘ ∘ (Note): Samples marked with ** in the tables are referenceexamples.

As can be seen from Table 20, satisfactory results were achieved in theheater units 10 of Samples 68 through 70, similar to Samples 1 through3, 5, and 7 of Working Example (1)-1, but with the heater unit 10 ofSample 71 which used a resistance heating element integrated using mica,the uniform heat properties exceeded 0.5° C. and the temperatureincrease rate and cooling rate were time-consuming.

Working Example (1)-10

Other than the flatness being varied in the surface of the seconduniform heat plate 12 in contact with the insulated resistance heatingelement 13, heater units 10 of Samples 72 through 85 were prepared inthe same manner as Sample 1 of Working Example (1)-1. In the heaterunits 10 of Samples 72 through 85, mobile cooling plates 20 were placedat the bottom similar to Working Example (1)-1, and a heat cycleconsisting of temperature increasing and cooling similar to WorkingExample (1)-1 was repeated 1000 times. To determine the effects the heatcycle had on the flatness and uniform heat properties of the waferplacement surface 11 a, the flatness and uniform heat properties of thewafer placement surface 11 a were measured after the heat cycle wascompleted 1 time, 100 times, 200 times, 300 times, 500 times, and 1000times. The results are shown in Table 21 below. The circle symbolindicates that predetermined conditions shown in the table weresatisfied, and the symbol x indicates that these conditions were notsatisfied.

TABLE 21 Flatness After After After After After After μm 1 Time 100Times 200 Times 300 Times 500 Times 1000 Times first second uniformuniform uniform uniform uniform uniform Spe- uniform uniform flat- heatflat- heat flat- heat flat- heat flat- heat flat- heat ci- heat heatness properties ness properties ness properties ness properties nessproperties ness properties Evalua- men plate plate μm ≦0.5° C. μm ≦0.5°C. μm ≦0.5° C. μm ≦0.5° C. μm ≦0.5° C. μm ≦0.5° C. tion 72 50 8 51 ∘ 51∘ 53 ∘ 52 ∘ 53 ∘ 52 ∘ excel- lent 73 50 15 52 ∘ 55 ∘ 56 ∘ 55 ∘ 57 ∘ 56 ∘excel- lent 74 50 26 52 ∘ 57 ∘ 59 ∘ 58 ∘ 60 ∘ 61 ∘ excel- lent 75 50 3452 ∘ 60 ∘ 62 ∘ 64 ∘ 63 ∘ 64 ∘ excel- lent 76 50 40 53 ∘ 62 ∘ 64 ∘ 65 ∘67 ∘ 66 ∘ excel- lent 77 50 48 53 ∘ 63 ∘ 65 ∘ 66 ∘ 67 ∘ 66 ∘ excel- lent78 50 55 53 ∘ 70 ∘ 78 ∘ 85 ∘ 88 ∘ 90 ∘ good 79 50 61 54 ∘ 75 ∘ 85 ∘ 90 ∘94 ∘ 96 ∘ good 80 50 72 55 ∘ 76 ∘ 87 ∘ 92 ∘ 96 ∘ 97 ∘ good 81 50 80 55 ∘75 ∘ 87 ∘ 93 ∘ 97 ∘ 97 ∘ good 82 50 98 56 ∘ 76 ∘ 88 ∘ 95 ∘ 99 ∘ 99 ∘good 83 50 111 65 ∘ 98 ∘ 113 x 121 x 126 x 129 x poor 84 50 135 66 ∘ 109x 126 x 135 x 141 x 144 x poor 85 50 159 69 ∘ 125 x 145 x 155 x 162 x166 x poor

As can be seen from Table 21, in Samples 83 through 85 in which theflatness exceeded 100 μm in the surface of the second uniform heat plate12 in contact with the insulated resistance heating element 13, theflatness of the wafer placement surface 11 a was poor as were theuniform heat properties, and the predetermined uniform heat propertyconditions were not successfully satisfied. In Samples 72 through 82 inwhich the flatness was 100 μm or less in the surface of the seconduniform heat plate 12 in contact with the insulated resistance heatingelement 13, the predetermined uniform heat property conditions weresuccessfully satisfied even after repeating the heat cycle 1000 times.In Samples 72 through 77 in which the flatness was 50 μm or less in thesurface of the second uniform heat plate 12 in contact with theinsulated resistance heating element 13, it can be seen that the changesin flatness of the wafer placement surface 11 a due to the heat historyof the heat cycle were successfully suppressed, and excellentreliability was demonstrated.

Working Example (1)-11

Other than the surface of the second uniform heat plate 12 in contactwith the insulated resistance heating element 13 being given an upwardlyconcave or upwardly convex shape and the flatness thereof being 40 μm,heater units 10 of Samples 86 and 87 were prepared in the same manner asSample 1 of Working Example (1)-1. For the heater units 10 of Samples 86and 87, the heat cycle was repeated 1000 times and the flatness anduniform heat properties of the wafer placement surface 11 a weredetermined in the same manner as Working Example (1)-10. The results areshown in Table 22 below. The circle symbol indicates that predeterminedconditions shown in the table were satisfied, and the symbol x indicatesthat these conditions were not satisfied.

TABLE 22 Flatness After After After After After After μm 1 Time 100Times 200 Times 300 Times 500 Times 1000 Times first second uniformuniform uniform uniform uniform uniform Spe- uniform uniform flat- heatflat- heat flat- heat flat- heat flat- heat flat- heat ci- heat heatness properties ness properties ness properties ness properties nessproperties ness properties Evalua- men plate plate μm ≦0.5° C. μm ≦0.5°C. μm ≦0.5° C. μm ≦0.5° C. μm ≦0.5° C. μm ≦0.5° C. tion 86 50 40 53 ∘ 62∘ 64 ∘ 65 ∘ 67 ∘ 66 ∘ excel- Up- lent wardly concave 87 50 40 53 ∘ 66 ∘68 ∘ 70 ∘ 74 ∘ 78 ∘ excel- Up- lent wardly convex

As can be seen from Table 22, changes in flatness of the wafer placementsurface 11 a due to the heat history of the heat cycle were successfullysuppressed and excellent reliability was demonstrated in the heaterunits 10 of Samples 86 and 87, but the change in flatness was smaller inSample 86 in which the surface of the second uniform heat plate 12 incontact with the insulated resistance heating element 13 had an upwardlyconcave shape, than in Sample 87 in which the shape was upwardly convex.

Working Examples (2)-1A through (2)-6B, which pertain to the secondembodiment of the present invention, are shown hereinbelow.

Working Example (2)-1A

The heater unit 10 shown in FIG. 4A was prepared as a working examplerelating to the second embodiment of the present invention. The materialof the first uniform heat plate 11 was selected from between the metalsCu and Al, and the material of the second uniform heat plate 12 wasselected from among the ceramics or metal-ceramic composite materialsAlN, SiC, SiSiC, and AlSiC, resulting in various combinations ofmaterials.

Processing for substrate suction was performed in the placement surface11 a of the first uniform heat plate 11, notches for flexibility wereformed by cutting in the opposite surface of the placement surface 11 a,the flatness was finished to 50 μm, and an Ni plating was formed. Atemperature sensor 40 for monitoring temperature was embedded in thefirst uniform heat plate 11. The second uniform heat plate 12 wassubjected to processing in order to avoid the temperature sensor 40 orthe power supply wiring, and the flatness was finished to 50 μm. Thefirst uniform heat plate 11 and the second uniform heat plate 12 haddiameters of 330 mm and thicknesses of 3 mm.

SUS foils were formed on heating element circuits for the resistanceheating elements 13 a, a plurality of polyimide sheets were prepared asthe insulating sheet 13 b, and these were stacked as shown in FIG. 7.Power supply wires were connected individually to the two stackedresistance heating elements 13 a and were enabled to supply electricityindividually. The insulated resistance heating element 13 obtained inthis manner was sandwiched between the first uniform heat plate 11 andthe second uniform heat plate 12, and the first uniform heat plate 11and the second uniform heat plate 12 were secured by being screwedtogether only in the center. A tube connected to a vacuum pump wasattached to a hole for vacuuming formed in advance in the second uniformheat plate 12, and the first uniform heat plate 11 and the seconduniform heat plate 12 were bonded together by vacuum-suction means forvacuum suctioning the space between the first uniform heat plate 11 andthe second uniform heat plate 12.

Thus, heater units 10 were prepared for Samples 1A through 8A shown inTable 23 below. For all of these samples, the change in flatness of theplacement surface 11 a and rate of temperature increase were measuredwhen the surface had been heated from room temperature to 200° C., bothwhen only one of the two resistance heating elements 13 a was suppliedwith power and heated (1.25 kW) and when both the elements were suppliedwith power and heated (2.5 kW). The temperature distribution wasmeasured by a wafer thermometer, which was a temperature measuringresistance element embedded in the wafer. The measurement results andtheir evaluations are shown in Table 23 below. The term “determination”in the following tables (Tables 23 through 43) refers to predeterminedconditions of the change in flatness being 10 μm or less, thetemperature increase rate at 1.25 kW being 480 seconds or less (21.9°C./min or greater), the temperature increase rate at 2.5 kW being 240seconds or less (43.8° C./min or greater), and the temperaturedistribution being 0.5° C. or less; wherein the circle symbol indicatesthat these conditions were satisfied and the symbol x indicates thatthese conditions were not satisfied. In the column “overalldetermination” in the table, the circle symbol indicates that all ofthese conditions were satisfied, and the symbol x indicates that not allof the conditions were satisfied.

TABLE 23 First Uniform Heat Plate/Second Uniform RT → 200° C. RT → 200°C. Rate of Temperature 200° C. Temperature Heat Plate Change in FlatnessIncrease (Seconds) Distribution Overall Specimen material thickness (mm)μm determination 1.25 kW 2.5 kW determination ° C. determinationDetermination 1A Cu/AlN 3/3 ≦10 ∘ 380 190 ∘ ≦0.5 ∘ ∘ 2A Cu/SiC 3/3 ≦10 ∘380 190 ∘ ≦0.5 ∘ ∘ 3A Cu/SiSiC 3/3 ≦10 ∘ 380 190 ∘ ≦0.5 ∘ ∘ 4A Cu/AlSiC3/3 ≦10 ∘ 380 190 ∘ ≦0.5 ∘ ∘ 5A Al/AlN 3/3 ≦10 ∘ 327 163 ∘ ≦0.5 ∘ ∘ 6AAl/SiC 3/3 ≦10 ∘ 327 163 ∘ ≦0.5 ∘ ∘ 7A Al/SiSiC 3/3 ≦10 ∘ 327 163 ∘ ≦0.5∘ ∘ 8A Al/AlSiC 3/3 ≦10 ∘ 327 163 ∘ ≦0.5 ∘ ∘

Working Example (2)-1B

Bonding means combining screws and bearings such as is shown in FIG. 8Awere used instead of the vacuum-suction means, and the first uniformheat plate 11 and the second uniform heat plate 12 were bonded togetheruniformly in six locations, otherwise the heater units 10 of Samples 1Bthrough 8B shown in Table 24 below were created in the same manner asWorking Example (2)-1A. These samples were heated in the same manner asin Working Example (2)-1A, and the change in flatness and temperatureincrease rate of the placement surfaces 11 a were measured. Themeasurement results and their evaluations are shown in Table 24 below.

TABLE 24 First Uniform Heat Plate/Second Uniform RT → 200° C. RT → 200°C. Rate of Temperature 200° C. Temperature Heat Plate Change in FlatnessIncrease (Seconds) Distribution Overall Specimen material thickness (mm)μm determination 1.25 kW 2.5 kW determination ° C. determinationDetermination 1B Cu/AlN 3/3 ≦10 ∘ 380 190 ∘ ≦0.5 ∘ ∘ 2B Cu/SiC 3/3 ≦10 ∘380 190 ∘ ≦0.5 ∘ ∘ 3B Cu/SiSiC 3/3 ≦10 ∘ 380 190 ∘ ≦0.5 ∘ ∘ 4B Cu/AlSiC3/3 ≦10 ∘ 380 190 ∘ ≦0.5 ∘ ∘ 5B Al/AlN 3/3 ≦10 ∘ 327 163 ∘ ≦0.5 ∘ ∘ 6BAl/SiC 3/3 ≦10 ∘ 327 163 ∘ ≦0.5 ∘ ∘ 7B Al/SiSiC 3/3 ≦10 ∘ 327 163 ∘ ≦0.5∘ ∘ 8B Al/AlSiC 3/3 ≦10 ∘ 327 163 ∘ ≦0.5 ∘ ∘

Working Example (2)-2A

The material of the first uniform heat plate 11 was selected from amongthe ceramics or metal-ceramic composite materials AlN, SiC, SiSiC, andAlSiC, and the material of the second uniform heat plate 12 was selectedfrom between the metals Cu and Al, resulting in various combinations ofmaterials. The placement surface 11 a of the first uniform heat plate 11was subjected to processing for substrate suction, and the flatness wasfinished to 50 μm. The surface of the second uniform heat plate 12 onthe substrate side was subjected to notching for flexibility as well asprocessing for avoiding the temperature sensor 40 and the power supplywiring, the flatness was finished to 50 μm, and an Ni plating wasformed. Otherwise, Samples 9A through 16A were prepared in the samemanner as in Working Example (2)-1A, and the same measurements weretaken.

The measurement results and their evaluations are shown in Table 25below.

TABLE 25 First Uniform Heat Plate/Second Uniform RT → 200° C. RT → 200°C. Rate of Temperature 200° C. Temperature Heat Plate Change in FlatnessIncrease (Seconds) Distribution Overall Specimen material thickness (mm)μm determination 1.25 kW 2.5 kW determination ° C. determinationDetermination  9A AlN/Cu 3/3 ≦10 ∘ 380 190 ∘ ≦0.5 ∘ ∘ 10A SiC/Cu 3/3 ≦10∘ 380 190 ∘ ≦0.5 ∘ ∘ 11A SiSiC/Cu 3/3 ≦10 ∘ 380 190 ∘ ≦0.5 ∘ ∘ 12AAlSiC/Cu 3/3 ≦10 ∘ 380 190 ∘ ≦0.5 ∘ ∘ 13A AlN/Al 3/3 ≦10 ∘ 327 163 ∘≦0.5 ∘ ∘ 14A SiC/Al 3/3 ≦10 ∘ 327 163 ∘ ≦0.5 ∘ ∘ 15A SiSiC/Al 3/3 ≦10 ∘327 163 ∘ ≦0.5 ∘ ∘ 16A AlSiC/Al 3/3 ≦10 ∘ 327 163 ∘ ≦0.5 ∘ ∘

Working Example (2)-2B

Bonding means combining screws and bearings such as is shown in FIG. 8Awere used instead of the vacuum-suction means, and the first uniformheat plate 11 and the second uniform heat plate 12 were bonded togetheruniformly in six locations, otherwise the heater units 10 of Samples 9Bthrough 16B shown in Table 26 below were created in the same manner asWorking Example (2)-2A. These samples were heated in the same manner asin Working Example (2)-1A, and the change in flatness and temperatureincrease rate of the placement surfaces 11 a were measured. Themeasurement results and their evaluations are shown in Table 26 below.

TABLE 26 First Uniform Heat RT → 200° C. Plate/Second Uniform RT → 200°C. Rate of Temperature 200° C. Temperature Heat Plate Change in FlatnessIncrease (Seconds) Distribution Overall Specimen material thickness (mm)μm determination 1.25 kW 2.5 kW determination ° C. determinationDetermination  9B AlN/Cu 3/3 ≦10 ∘ 380 190 ∘ ≦0.5 ∘ ∘ 10B SiC/Cu 3/3 ≦10∘ 380 190 ∘ ≦0.5 ∘ ∘ 11B SiSiC/Cu 3/3 ≦10 ∘ 380 190 ∘ ≦0.5 ∘ ∘ 12BAlSiC/Cu 3/3 ≦10 ∘ 380 190 ∘ ≦0.5 ∘ ∘ 13B AlN/Al 3/3 ≦10 ∘ 327 163 ∘≦0.5 ∘ ∘ 14B SiC/Al 3/3 ≦10 ∘ 327 163 ∘ ≦0.5 ∘ ∘ 15B SiSiC/Al 3/3 ≦10 ∘327 163 ∘ ≦0.5 ∘ ∘ 16B AlSiC/Al 3/3 ≦10 ∘ 327 163 ∘ ≦0.5 ∘ ∘

Comparative Example (2)-1A

The first uniform heat plate 11 and the second uniform heat plate 12were both Cu, both Al, or both AlN, otherwise the Samples 17A through19A were created in the same manner as Working Example (2)-1A, and thesame measurements as Working Example (2)-1A were taken. For the sake offurther comparison, Samples 20 through 22 were prepared in the samemanner as in Working Example (2)-1A, other than the second uniform heatplate 12 not being used as in conventional practice, only the firstuniform heat plate 11 being used with a thickness of 6 mm, the materialbeing Cu, Al, or AlN, and a heating element insulated with polyimidebeing attached and integrated with a heat-resistant adhesive to thesurface of the first uniform heat plate 11 on the side opposite theplacement surface 11 a; and the same measurements as Working Example(2)-1A were taken. The measurement results and their evaluations areshown in Table 27 below.

TABLE 27 First Uniform Heat RT → 200° C. Rate Plate/Second Uniform RT →200° C. of Temperature 200° C. Temperature Heat Plate Change in FlatnessIncrease (Seconds) Distribution Overall Specimen material thickness (mm)μm determination 1.25 kW 2.5 kW determination ° C. determinationDetermination 17A Cu/Cu 3/3 30 x 494 247 x 0.6 x x 18A Al/Al 3/3 40 x327 163 ∘ 0.7 x x 19A AlN/AlN 3/3 ≦10 ∘ 327 163 ∘ 0.9 x x 20 Cu/— 6/— 60x 494 247 x 0.6 x x 21 Al/— 6/— 80 x 327 163 ∘ 0.7 x x 22 AlN/— 6/— ≦10∘ 327 163 ∘ 0.9 x x

Comparative Example (2)-1B

Bonding means combining screws and bearings such as is shown in FIG. 8Awere used instead of the vacuum-suction means, and the first uniformheat plate 11 and the second uniform heat plate 12 were bonded togetheruniformly in six locations, otherwise the heater units 10 of Samples 17Bthrough 19B shown in Table 28 below were created in the same manner asthe Samples 17A through 19A of Comparative Example (2)-1A. These sampleswere heated in the same manner as in Comparative Example (2)-1A, and thechange in flatness and temperature increase rate of the placementsurfaces 11 a were measured. The measurement results and theirevaluations are shown in Table 28 below.

TABLE 28 First Uniform Heat RT → 200° C. Plate/Second Uniform RT → 200°C. Rate of Temperature 200° C. Temperature Heat Plate Change in FlatnessIncrease (Seconds) Distribution Overall Specimen material thickness (mm)μm determination 1.25 kW 2.5 kW determination ° C. determinationDetermination 17B Cu/Cu 3/3 30 x 494 247 x 0.6 x x 18B Al/Al 3/3 40 x327 163 ∘ 0.7 x x 19B AlN/AlN 3/3 ≦10 ∘ 327 163 ∘ 0.9 x x

As can be seen from the results of Tables 27 and 28, since the thinneduniform heat plate of metal has low rigidity, warping during thetemperature increase was extensive in the cases of vacuum suctioning twoplates as well as of course the cases of only one conventional metalplate in which a second uniform heat plate was not used, and sufficientuniform heat properties were not achieved.

Furthermore, the temperature increase rate was also slow in the case ofCu because of the large heat capacity.

It is clear from the results of Tables 23, 24, 25, and 26 that betweenthe first uniform heat plate 11 and the second uniform heat plate 12, byusing a metal for one, using a ceramic or a metal-ceramic compositematerial for the other, and bonding these two uniform heat platestogether by vacuum-suction means or by bonding means combining screwsand bearings via the insulated resistance heating element 13 made ofinsulated layers, the change in flatness can be minimized, uniform heatproperties can be ensured, and a high rate of temperature increase canbe achieved. It is also clear that by staking two resistance heatingelements 13 a, the power can be increased to twice the usual power ofone resistance heating element 13 a, and the temperature can beincreased at twice the rate.

Reference Example (2)-2

The first uniform heat plate 11 and the second uniform heat plate 12were not bonded by vacuum suction means or by bonding means combiningscrews and bearings, but were fixed together by common screws inmultiple locations, otherwise Samples 23 through 38 were prepared in thesame manner as Working Example (2)-1A. These were heated from roomtemperature to 200° C. in the same manner as Working Example (2)-1A, andthe change in flatness and temperature increase rate of the placementsurfaces 11 a were measured. The measurement results and theirevaluations are shown in Table 29 below.

TABLE 29 First Uniform Heat Plate/ Second Uniform RT → 200° C. HeatPlate Change in 200° C. Temperature thickness Flatness DistributionOverall Specimen material (mm) μm determination ° C. determinationDetermination 23 Cu/AlN 3/3 102 x >1 x x 24 Cu/SiC 3/3 110 x >1 x x 25Cu/SiSiC 3/3 115 x >1 x x 26 Cu/AlSiC 3/3 93 x 0.9 x x 27 Al/AlN 3/3 156x >1 x x 28 Al/SiC 3/3 168 x >1 x x 29 Al/SiSiC 3/3 176 x >1 x x 30Al/AlSiC 3/3 142 x >1 x x 31 AlN/Cu 3/3 100 x >1 x x 32 SiC/Cu 3/3 108x >1 x x 33 SiSiC/Cu 3/3 113 x >1 x x 34 AlSiC/Cu 3/3 91 x 0.9 x x 35AlN/Al 3/3 153 x >1 x x 36 SiC/Al 3/3 165 x >1 x x 37 SiSiC/Al 3/3 172x >1 x x 38 AlSiC/Al 3/3 139 x >1 x x

It is clear from Table 29 that in the heater units in which the firstuniform heat plate 11 and the second uniform heat plate 12 were fixed byusing multiple common conventional screws, there was a large change inflatness during temperature increasing and satisfactory uniform heatingwas not achieved at 200° C.

Reference Example (2)-3A

Processing for flexibility was not performed on the first uniform heatplate 11, otherwise the heater units of Samples 39A through 54A wereprepared in the same manner as in Working Example (2)-1A, the heaterunits were heated from room temperature to 200° C. in the same manner asWorking Example (2)-1A, and the change in flatness and temperatureincrease rate of the placement surfaces 11 a were measured. Themeasurement results and their evaluations are shown in Table 30 below.

TABLE 30 First Uniform Heat Plate/ Second Uniform RT → 200° C. HeatPlate Change in 200° C. Temperature thickness Flatness DistributionOverall Specimen material (mm) μm determination ° C. determinationDetermination 39A Cu/AlN 3/3 49 x 0.8 x x 40A Cu/SiC 3/3 52 x 0.9 x x41A Cu/SiSiC 3/3 55 x 0.9 x x 42A Cu/AlSiC 3/3 44 x 0.8 x x 43A Al/AlN3/3 74 x 0.9 x x 44A Al/SiC 3/3 80 x 0.9 x x 45A Al/SiSiC 3/3 84 x 0.9 xx 46A Al/AlSiC 3/3 68 x 0.9 x x 47A AlN/Cu 3/3 48 x 0.8 x x 48A SiC/Cu3/3 51 x 0.9 x x 49A SiSiC/Cu 3/3 54 x 0.9 x x 50A AlSiC/Cu 3/3 43 x 0.8x x 51A AlN/Al 3/3 73 x 0.9 x x 52A SiC/Al 3/3 79 x 0.9 x x 53A SiSiC/Al3/3 82 x 0.9 x x 54A AlSiC/Al 3/3 66 x 0.9 x x

Reference Example (2)-3B

Bonding means combining screws and bearings such as is shown in FIG. 8Awere used instead of the vacuum-suction means, and the first uniformheat plate 11 and the second uniform heat plate 12 were bonded togetheruniformly in six locations, otherwise the heater units of Samples 39Bthrough 54B shown in Table 31 below were created in the same manner asin Reference Example (2)-3A. These samples were heated in the samemanner as in Comparative Example (2)-1A, and the change in flatness andtemperature increase rate of the placement surfaces 11 a were measured.The measurement results and their evaluations are shown in Table 31below.

TABLE 31 First Uniform Heat Plate/ Second Uniform RT → 200° C. HeatPlate Change in 200° C. Temperature thickness Flatness DistributionOverall Specimen material (mm) μm determination ° C. determinationDetermination 39B Cu/AlN 3/3 49 x 0.8 x x 40B Cu/SiC 3/3 52 x 0.9 x x41B Cu/SiSiC 3/3 55 x 0.9 x x 42B Cu/AlSiC 3/3 44 x 0.8 x x 43B Al/AlN3/3 74 x 0.9 x x 44B Al/SiC 3/3 80 x 0.9 x x 45B Al/SiSiC 3/3 84 x 0.9 xx 46B Al/AlSiC 3/3 68 x 0.9 x x 47B AlN/Cu 3/3 48 x 0.8 x x 48B SiC/Cu3/3 51 x 0.9 x x 49B SiSiC/Cu 3/3 54 x 0.9 x x 50B AlSiC/Cu 3/3 43 x 0.8x x 51B AlN/Al 3/3 73 x 0.9 x x 52B SiC/Al 3/3 79 x 0.9 x x 53B SiSiC/Al3/3 82 x 0.9 x x 54B AlSiC/Al 3/3 66 x 0.9 x x

It is clear from Tables 30 and 31 that when processing for flexibilityis not performed, the change in flatness during temperature increasingis greater and the uniform heat properties during temperature increasingare not as good as when this processing is performed.

Working Example (2)-3A

Other than the thickness of the first uniform heat plate 11 being 2 mmand the thickness of the second uniform heat plate 12 being 4 mm, theheater units of Samples 55A through 62A were prepared in the same manneras in Working Example (2)-1A, and the same measurements as WorkingExample (2)-1A were taken. The measurement results and their evaluationsare shown in Table 32 below.

TABLE 32 First Uniform Heat Plate/ Second Uniform RT → 200° C. RT → 200°C. Heat Plate Change in Rate of Temperature 200° C. Temperaturethickness Flatness Increase (Seconds) Distribution Overall Specimenmaterial (mm) μm determination 1.25 kW 2.5 kW determination ° C.determination Determination 55A Cu/AlN 2/4 ≦10 ∘ 342 171 ∘ ≦0.5 ∘ ∘ 56ACu/SiC 2/4 ≦10 ∘ 342 171 ∘ ≦0.5 ∘ ∘ 57A Cu/SiSiC 2/4 ≦10 ∘ 342 171 ∘≦0.5 ∘ ∘ 58A Cu/AlSiC 2/4 ≦10 ∘ 342 171 ∘ ≦0.5 ∘ ∘ 59A Al/AlN 2/4 ≦10 ∘294 147 ∘ ≦0.5 ∘ ∘ 60A Al/SiC 2/4 ≦10 ∘ 294 147 ∘ ≦0.5 ∘ ∘ 61A Al/SiSiC2/4 ≦10 ∘ 294 147 ∘ ≦0.5 ∘ ∘ 62A Al/AlSiC 2/4 ≦10 ∘ 294 147 ∘ ≦0.5 ∘ ∘

Working Example (2)-3B

Bonding means combining screws and bearings such as is shown in FIG. 8Awere used instead of the vacuum-suction means, and the first uniformheat plate 11 and the second uniform heat plate 12 were bonded togetheruniformly in six locations, otherwise the heater units 10 of Samples 55Bthrough 62B shown in Table 33 below were created in the same manner asin Working Example (2)-3A.

These samples were heated in the same manner as in Working Example(2)-1A, and the change in flatness and temperature increase rate of theplacement surfaces 11 a were measured. The measurement results and theirevaluations are shown in Table 33 below.

TABLE 33 First Uniform Heat Plate/ Second Uniform RT → 200° C. RT → 200°C. Heat Plate Change in Rate of Temperature 200° C. Temperaturethickness Flatness Increase (Seconds) Distribution Overall Specimenmaterial (mm) μm determination 1.25 kW 2.5 kW determination ° C.determination Determination 55B Cu/AlN 2/4 ≦10 ∘ 342 171 ∘ ≦0.5 ∘ ∘ 56BCu/SiC 2/4 ≦10 ∘ 342 171 ∘ ≦0.5 ∘ ∘ 57B Cu/SiSiC 2/4 ≦10 ∘ 342 171 ∘≦0.5 ∘ ∘ 58B Cu/AlSiC 2/4 ≦10 ∘ 342 171 ∘ ≦0.5 ∘ ∘ 59B Al/AlN 2/4 ≦10 ∘294 147 ∘ ≦0.5 ∘ ∘ 60B Al/SiC 2/4 ≦10 ∘ 294 147 ∘ ≦0.5 ∘ ∘ 61B Al/SiSiC2/4 ≦10 ∘ 294 147 ∘ ≦0.5 ∘ ∘ 62B Al/AlSiC 2/4 ≦10 ∘ 294 147 ∘ ≦0.5 ∘ ∘

Working Example (2)-4A

Other than the thickness of the first uniform heat plate 11 being 4 mmand the thickness of the second uniform heat plate 12 being 2 mm, theheater units of Samples 63A through 70A were prepared in the same manneras in Working Example (2)-2A, and the same measurements as WorkingExample (2)-1A were taken. The measurement results and their evaluationsare shown in Table 34 below.

TABLE 34 First Uniform Heat Plate/ Second Uniform RT → 200° C. RT → 200°C. Heat Plate Change in Rate of Temperature 200° C. Temperaturethickness Flatness Increase (Seconds) Distribution Overall Specimenmaterial (mm) μm determination 1.25 kW 2.5 kW determination ° C.determination Determination 63A AlN/Cu 4/2 ≦10 ∘ 342 171 ∘ ≦0.5 ∘ ∘ 64ASiC/Cu 4/2 ≦10 ∘ 342 171 ∘ ≦0.5 ∘ ∘ 65A SiSiC/Cu 4/2 ≦10 ∘ 342 171 ∘≦0.5 ∘ ∘ 66A AlSiC/Cu 4/2 ≦10 ∘ 342 171 ∘ ≦0.5 ∘ ∘ 67A AlN/Al 4/2 ≦10 ∘294 147 ∘ ≦0.5 ∘ ∘ 68A SiC/Al 4/2 ≦10 ∘ 294 147 ∘ ≦0.5 ∘ ∘ 69A SiSiC/Al4/2 ≦10 ∘ 294 147 ∘ ≦0.5 ∘ ∘ 70A AlSiC/Al 4/2 ≦10 ∘ 294 147 ∘ ≦0.5 ∘ ∘

Working Example (2)-4B

Bonding means combining screws and bearings such as is shown in FIG. 8Awere used instead of the vacuum-suction means, and the first uniformheat plate 11 and the second uniform heat plate 12 were bonded togetheruniformly in six locations, otherwise the heater units 10 of Samples 63Bthrough 70B shown in Table 35 below were created in the same manner asin Working Example (2)-4A.

These samples were heated in the same manner as in Working Example(2)-1A, and the change in flatness and temperature increase rate of theplacement surfaces 11 a were measured. The measurement results and theirevaluations are shown in Table 35 below.

TABLE 35 First Uniform Heat Plate/ Second Uniform RT → 200° C. RT → 200°C. Heat Plate Change in Rate of Temperature 200° C. Temperaturethickness Flatness Increase (Seconds) Distribution Overall Specimenmaterial (mm) μm determination 1.25 kW 2.5 kW determination ° C.determination Determination 63B AlN/Cu 4/2 ≦10 ∘ 342 171 ∘ ≦0.5 ∘ ∘ 64BSiC/Cu 4/2 ≦10 ∘ 342 171 ∘ ≦0.5 ∘ ∘ 65B SiSiC/Cu 4/2 ≦10 ∘ 342 171 ∘≦0.5 ∘ ∘ 66B AlSiC/Cu 4/2 ≦10 ∘ 342 171 ∘ ≦0.5 ∘ ∘ 67B AlN/Al 4/2 ≦10 ∘294 147 ∘ ≦0.5 ∘ ∘ 68B SiC/Al 4/2 ≦10 ∘ 294 147 ∘ ≦0.5 ∘ ∘ 69B SiSiC/Al4/2 ≦10 ∘ 294 147 ∘ ≦0.5 ∘ ∘ 70B AlSiC/Al 4/2 ≦10 ∘ 294 147 ∘ ≦0.5 ∘ ∘

Reference Example (2)-4C

For the sake of reference the heater unit of Sample 71 was prepared byreversing the thicknesses of the first uniform heat plate 11 and thesecond uniform heat plate 12 of Sample 55A in Working Example (2)-3A,and the same measurements were taken. The measurement results and theirevaluations are shown in Table 36 below.

TABLE 36 First Uniform Heat Plate/ Second Uniform RT → 200° C. RT → 200°C. Heat Plate Change in Rate of Temperature 200° C. Temperaturethickness Flatness Increase (Seconds) Distribution Overall Specimenmaterial (mm) μm determination 1.25 kW 2.5 kW determination ° C.determination Determination 71 Cu/AlN 4/2 50 x 547 274 x ≦0.5 ∘ x

When the results of Tables 32, 33, 34, and 35 are compared to those ofTables 23, 24, 25, and 26, it is clear that making the metal less thickthan the ceramic or the metal-ceramic composite material speeds up thetemperature increase rate. When the metal is thicker than the ceramic asin the reference example shown in Table 36, the time showing thetemperature increase rate is longer and the ceramic is too thin, whichmakes it impossible to maintain flatness. In other words, it is clearthat thickening the ceramic and thinning the metal makes warping andother problems less likely and increases reliability.

Working Example (2)-5

Other than flanges being processed into the external peripheries of thefirst uniform heat plate 11 and the second uniform heat plate 12 as inFIG. 9A, a heater unit was prepared in the same manner as in WorkingExample (2)-1A, and an annular band made of heat-resistant rubber havingan inside diameter of 300 mm was placed and hermetically sealed in theportion facing the flanges of the first uniform heat plate 11 and thesecond uniform heat plate 12 so as to cover the external peripheral sidesurfaces of the first uniform heat plate 11 and the second uniform heatplate 12. The periphery around the lifter pin, the temperature sensor40, and the power supply wiring feed-out section was hermetically sealedwith an O-ring made of a heat-resistant resin. The same measurements asthose of Working Example (2)-1A were taken of Samples 72-87 obtained inthis manner. The measurement results and their evaluations are shown inTable 37 below.

TABLE 37 First Uniform Heat Plate/ Second Uniform RT → 200° C. RT → 200°C. Heat Plate Change in Rate of Temperature 200° C. Temperaturethickness Flatness Increase (Seconds) Distribution Overall Specimenmaterial (mm) μm determination 1.25 kW 2.5 kW determination ° C.determination Determination 72 Cu/AlN 3/3 ≦10 ∘ 342 171 ∘ ≦0.5 ∘ ∘ 73Cu/SiC 3/3 ≦10 ∘ 342 171 ∘ ≦0.5 ∘ ∘ 74 Cu/SiSiC 3/3 ≦10 ∘ 342 171 ∘ ≦0.5∘ ∘ 75 Cu/AlSiC 3/3 ≦10 ∘ 342 171 ∘ ≦0.5 ∘ ∘ 76 Al/AlN 3/3 ≦10 ∘ 265 132∘ ≦0.5 ∘ ∘ 77 Al/SiC 3/3 ≦10 ∘ 265 132 ∘ ≦0.5 ∘ ∘ 78 Al/SiSiC 3/3 ≦10 ∘265 132 ∘ ≦0.5 ∘ ∘ 79 Al/AlSiC 3/3 ≦10 ∘ 265 132 ∘ ≦0.5 ∘ ∘ 80 AlN/Cu3/3 ≦10 ∘ 342 171 ∘ ≦0.5 ∘ ∘ 81 SiC/Cu 3/3 ≦10 ∘ 342 171 ∘ ≦0.5 ∘ ∘ 82SiSiC/Cu 3/3 ≦10 ∘ 342 171 ∘ ≦0.5 ∘ ∘ 83 AlSiC/Cu 3/3 ≦10 ∘ 342 171 ∘≦0.5 ∘ ∘ 84 AlN/Al 3/3 ≦10 ∘ 265 132 ∘ ≦0.5 ∘ ∘ 85 SiC/Al 3/3 ≦10 ∘ 265132 ∘ ≦0.5 ∘ ∘ 86 SiSiC/Al 3/3 ≦10 ∘ 265 132 ∘ ≦0.5 ∘ ∘ 87 AlSiC/Al 3/3≦10 ∘ 265 132 ∘ ≦0.5 ∘ ∘

It is clear from Table 37 that creating an airtight seal in the externalperipheries of the first uniform heat plate 11 and the second uniformheat plate 12 can increase airtightness, improve adherence between theuniform heat plates 11, 12 and the insulated resistance heating element13, and increase the rate of temperature increase.

Working Example (2)-6A

To prepare the heater shown in FIG. 10, first, a mobile cooling plate 20was prepared using an aluminum alloy plate. A through-hole for allowingpassage of the power supply wiring, the temperature sensor, and a rodfor supporting the heater unit 10 was formed by mechanical processing inthis cooling plate 20. Furthermore, mechanical processing was performedso that the flatness was 200 μm in the surface on the side in contactwith the heater unit. A soft silicon sheet 0.5 mm in thickness wasprovided on the surface in contact with the heater unit so that uniformcontact was achieved throughout the entire surface rather than onlypartial contact.

Furthermore, a phosphorus deoxidized copper pipe 6 mm in outsidediameter and 4 mm in inside diameter was formed by bending as the flowpassage capable of flowing refrigerant. A counterbore was provided inthe surface of the cooling plate 20 on the side opposite the surface incontact with the heater unit 10, the copper pipe was fitted into thiscounterbore, a thermally conductive resin was embedded in the spaceformed thereby, and heat was efficiently transmitted. An inlet and anoutlet for supplying and discharging cooling water were formed in theends of the flow passage. A stopper plate for supporting the flowpassage was fixed in place by screwing, and the cooling plate 20 havinga flow passage in its interior was completed. This cooling plate 20 wascapable of being moved up and down and brought in contact with/separatedfrom the heater unit 10 by a raising/lowering mechanism composed of anair cylinder.

Next, a container 30 was prepared from stainless steel. The side wallsof the container 30 had heights of 30 mm on the inside surfaces, aninside diameter of 337 mm, and thicknesses of 1.5 mm, and the bottomsurface had a thickness of 3 mm. In the bottom surface was formed anopening for fastening the power supply wiring, the temperature sensor,and a support rod for supporting the heater unit 10 in the container.The samples prepared in Working Example (2)-5, Working Example (2)-3A,and Working Example (2)-4A previously described were attached to thesupport rods of each of the containers 30, and the mobile cooling plates20 were assembled with the raising/lowering mechanisms, completing theheaters. In the resulting heaters, the mobile cooling plates 20 werepressed against the heater units 10 whose temperatures had been raisedand stabilized at 200° C., causing the heater units to cool rapidly, andthe changes in flatness and cooling rates at 150° C. were measured. Theterm “determination” for the cooling rate, the circle symbol indicates atime for cooling from 200° C. to 150° C. being 60 seconds or less, andthe symbol x indicates a time exceeding 60 seconds for the same. Themeasurement results and their evaluations are shown in Tables 38, 39,and 40 below.

TABLE 38 First Uniform Heat Plate/ Second Uniform 200° C. → 150° C. HeatPlate Change in 200° C. → 150° C. 200° C. Temperature thickness FlatnessRate of Cooling Distribution Overall Specimen material (mm) μmdetermination seconds determination ° C. determination Determination 72Cu/AlN 3/3 ≦10 ∘ 30 ∘ ≦0.5 ∘ ∘ 73 Cu/SiC 3/3 ≦10 ∘ 30 ∘ ≦0.5 ∘ ∘ 74Cu/SiSiC 3/3 ≦10 ∘ 30 ∘ ≦0.5 ∘ ∘ 75 Cu/AlSiC 3/3 ≦10 ∘ 30 ∘ ≦0.5 ∘ ∘ 76Al/AlN 3/3 ≦10 ∘ 26 ∘ ≦0.5 ∘ ∘ 77 Al/SiC 3/3 ≦10 ∘ 26 ∘ ≦0.5 ∘ ∘ 78Al/SiSiC 3/3 ≦10 ∘ 26 ∘ ≦0.5 ∘ ∘ 79 Al/AlSiC 3/3 ≦10 ∘ 26 ∘ ≦0.5 ∘ ∘ 80AlN/Cu 3/3 ≦10 ∘ 31 ∘ ≦0.5 ∘ ∘ 81 SiC/Cu 3/3 ≦10 ∘ 31 ∘ ≦0.5 ∘ ∘ 82SiSiC/Cu 3/3 ≦10 ∘ 31 ∘ ≦0.5 ∘ ∘ 83 AlSiC/Cu 3/3 ≦10 ∘ 31 ∘ ≦0.5 ∘ ∘ 84AlN/Al 3/3 ≦10 ∘ 26 ∘ ≦0.5 ∘ ∘ 85 SiC/Al 3/3 ≦10 ∘ 26 ∘ ≦0.5 ∘ ∘ 86SiSiC/Al 3/3 ≦10 ∘ 26 ∘ ≦0.5 ∘ ∘ 87 AlSiC/Al 3/3 ≦10 ∘ 26 ∘ ≦0.5 ∘ ∘

TABLE 39 First Uniform Heat Plate/ Second Uniform 200° C. → 150° C. HeatPlate Change in 200° C. → 150° C. 200° C. Temperature thickness FlatnessRate of Cooling Distribution Overall Specimen material (mm) μmdetermination seconds determination ° C. determination Determination 55ACu/AlN 2/4 ≦10 ∘ 29 ∘ ≦0.5 ∘ ∘ 56A Cu/SiC 2/4 ≦10 ∘ 29 ∘ ≦0.5 ∘ ∘ 57ACu/SiSiC 2/4 ≦10 ∘ 29 ∘ ≦0.5 ∘ ∘ 58A Cu/AlSiC 2/4 ≦10 ∘ 29 ∘ ≦0.5 ∘ ∘59A Al/AlN 2/4 ≦10 ∘ 25 ∘ ≦0.5 ∘ ∘ 60A Al/SiC 2/4 ≦10 ∘ 25 ∘ ≦0.5 ∘ ∘61A Al/SiSiC 2/4 ≦10 ∘ 25 ∘ ≦0.5 ∘ ∘ 62A Al/AlSiC 2/4 ≦10 ∘ 25 ∘ ≦0.5 ∘∘

TABLE 40 First Uniform Heat Plate/ Second Uniform 200° C. → 150° C. HeatPlate Change in 200° C. → 150° C. 200° C. Temperature thickness FlatnessRate of Cooling Distribution Overall Specimen material (mm) μmdetermination seconds determination ° C. determination Determination 63AAlN/Cu 4/2 ≦10 ∘ 30 ∘ ≦0.5 ∘ ∘ 64A SiC/Cu 4/2 ≦10 ∘ 30 ∘ ≦0.5 ∘ ∘ 65ASiSiC/Cu 4/2 ≦10 ∘ 30 ∘ ≦0.5 ∘ ∘ 66A AlSiC/Cu 4/2 ≦10 ∘ 30 ∘ ≦0.5 ∘ ∘67A AlN/Al 4/2 ≦10 ∘ 26 ∘ ≦0.5 ∘ ∘ 68A SiC/Al 4/2 ≦10 ∘ 26 ∘ ≦0.5 ∘ ∘69A SiSiC/Al 4/2 ≦10 ∘ 26 ∘ ≦0.5 ∘ ∘ 70A AlSiC/Al 4/2 ≦10 ∘ 26 ∘ ≦0.5 ∘∘

Working Example (2)-6B

The samples prepared in Working Example (2)-3B and Working Example(2)-4B previously described were attached instead of the samplesprepared in Working Example (2)-3A and Working Example (2)-4A, otherwisethe heaters shown in FIG. 10 were prepared in the same manner as inWorking Example (2)-6A. The change in flatness and cooling rate at 150°C. were measured in these heaters in the same manner as in WorkingExample (2)-6A. The measurement results and their evaluations are shownin Tables 41 and 42 below.

TABLE 41 First Uniform Heat Plate/ Second Uniform 200° C. → 150° C. HeatPlate Change in 200° C. → 150° C. 200° C. Temperature thickness FlatnessRate of Cooling Distribution Overall Specimen material (mm) μmdetermination seconds determination ° C. determination Determination 55BCu/AlN 2/4 ≦10 ∘ 29 ∘ ≦0.5 ∘ ∘ 56B Cu/SiC 2/4 ≦10 ∘ 29 ∘ ≦0.5 ∘ ∘ 57BCu/SiSiC 2/4 ≦10 ∘ 29 ∘ ≦0.5 ∘ ∘ 58B Cu/AlSiC 2/4 ≦10 ∘ 29 ∘ ≦0.5 ∘ ∘59B Al/AlN 2/4 ≦10 ∘ 25 ∘ ≦0.5 ∘ ∘ 60B Al/SiC 2/4 ≦10 ∘ 25 ∘ ≦0.5 ∘ ∘61B Al/SiSiC 2/4 ≦10 ∘ 25 ∘ ≦0.5 ∘ ∘ 62B Al/AlSiC 2/4 ≦10 ∘ 25 ∘ ≦0.5 ∘∘

TABLE 42 First Uniform Heat Plate/ Second Uniform 200° C. → 150° C. HeatPlate Change in 200° C. → 150° C. 200° C. Temperature thickness FlatnessRate of Cooling Distribution Overall Specimen material (mm) μmdetermination seconds determination ° C. determination Determination 63BAlN/Cu 4/2 ≦10 ∘ 30 ∘ ≦0.5 ∘ ∘ 64B SiC/Cu 4/2 ≦10 ∘ 30 ∘ ≦0.5 ∘ ∘ 65BSiSiC/Cu 4/2 ≦10 ∘ 30 ∘ ≦0.5 ∘ ∘ 66B AlSiC/Cu 4/2 ≦10 ∘ 30 ∘ ≦0.5 ∘ ∘67B AlN/Al 4/2 ≦10 ∘ 26 ∘ ≦0.5 ∘ ∘ 68B SiC/Al 4/2 ≦10 ∘ 26 ∘ ≦0.5 ∘ ∘69B SiSiC/Al 4/2 ≦10 ∘ 26 ∘ ≦0.5 ∘ ∘ 70B AlSiC/Al 4/2 ≦10 ∘ 26 ∘ ≦0.5 ∘∘

Reference Example (2)-4

For the sake of reference, heaters were completed in the same manner asin Working Example (2)-6A using the samples prepared in ReferenceExample (2)-2, and the heaters were evaluated in the same manner as inWorking Example (2)-6A. The measurement results and their evaluationsare shown in Table 43 below.

TABLE 43 First Uniform Heat Plate/ Second Uniform 200° C. → 150° C. HeatPlate Change in 200° C. → 150° C. thickness Flatness Rate of CoolingOverall Specimen material (mm) μm determination seconds determinationDetermination 23 Cu/AlN 3/3 57 x 39 ∘ x 24 Cu/SiC 3/3 61 x 39 ∘ x 25Cu/SiSiC 3/3 64 x 39 ∘ x 26 Cu/AlSiC 3/3 52 x 39 ∘ x 27 Al/AlN 3/3 87 x34 ∘ x 28 Al/SiC 3/3 94 x 34 ∘ x 29 Al/SiSiC 3/3 98 x 34 ∘ x 30 Al/AlSiC3/3 79 x 34 ∘ x 31 AlN/Cu 3/3 56 x 40 ∘ x 32 SiC/Cu 3/3 60 x 40 ∘ x 33SiSiC/Cu 3/3 63 x 40 ∘ x 34 AlSiC/Cu 3/3 51 x 40 ∘ x 35 AlN/Al 3/3 85 x34 ∘ x 36 SiC/Al 3/3 92 x 34 ∘ x 37 SiSiC/Al 3/3 96 x 34 ∘ x 38 AlSiC/Al3/3 77 x 34 ∘ x

It is clear from Tables 38, 39, 41, 40, 42, and 43 that compared tocommon conventional multi-point screwing methods, the change in flatnessduring cooling can be kept smaller and the uniform heat properties canbe increased with the second embodiment of the present invention. It isalso clear that heat resistance is reduced by the force of adherencecaused by the vacuum-suction means or the bonding means combining screwsand bearings.

KEY

-   -   1 Heating and cooling device    -   10 Heater unit    -   11 First uniform heat plate    -   11 a Wafer placement surface    -   12 Second uniform heat plate    -   13 Insulated resistance heating element\    -   13 a Metal foil    -   13 b Heat-resistant insulator    -   14 Screw    -   15 Bearing ball    -   16 a, b, c Elastic members    -   20 Mobile cooling plate    -   30 Container    -   40 Temperature sensor    -   N Concavity    -   S Object to be heated

1. A heater unit comprising: a first uniform heat plate having aplacement surface for placing a substrate; a second uniform heat platefor supporting the first uniform heat plate; and at least one layer ofan insulated resistance heating element provided between the firstuniform heat plate and the second uniform heat plate; the first uniformheat plate of the heater unit having a first thermal conductivity K1 anda first Young's modulus Y1, and the second uniform heat plate of theheater unit have a second thermal conductivity K2 and a second Young'smodulus Y2, where K1≠K2 and Y1≠Y2.
 2. The heater unit according to claim1, wherein the first uniform heat plate is formed of a metal, the seconduniform heat plate is formed of a ceramic or a metal-ceramic compositematerial, the relationship between the thermal conductivity of each ofthe first uniform heat plate and the second uniform heat plate is K1>K2,and the relationship between the Young's modulus of each of the firstuniform heat plate and the second uniform heat plate is Y2>Y1.
 3. Theheater unit according to claim 2, wherein the total of the thicknessesof the first uniform heat plate and the second uniform heat plate is1/40 or less of the diameter of the first uniform heat plate, theinsulated resistance heating element is integrally formed using aresistance heating element and a heat-resistant insulator, theheat-resistant insulator is a heat-resistant insulator whose primaryconstituent is polyimide or Teflon, or both, and the thickness of theinsulated resistance heating element is 0.5 mm or less.
 4. The heaterunit according to claim 2, wherein the first uniform heat plate and thesecond uniform heat plate are each 1 mm or greater in thickness.
 5. Theheater unit according to claim 2, wherein the second uniform heat platehas a surface in contact with the insulated resistance heating elementand the surface has a flatness that is 100 μm or less.
 6. The heaterunit according to claim 2, wherein the second uniform heat plate has asurface in contact with the insulated resistance heating element, thesurface includes an upwardly concave shape.
 7. The heater unit accordingto claim 1, wherein the first uniform heat plate and the second uniformheat plate are bonded together so that their opposing surfaces aremovable relative to each other in substantially parallel directions, andone of the first uniform heat plate and the second uniform heat plate isformed of metal and is subjected to processing providing flexibility onat least one side, while the other of the first uniform heat plate andthe second uniform heat plate is formed of a ceramic or a metal-ceramiccomposite material.
 8. The heater unit according to claim 7, wherein theone of the first uniform heat plate and the second uniform heat platecomprises a metal with a first thickness and the other of the firstuniform heat plate and the second uniform heat plate comprises a ceramicor a metal-ceramic composite material with a second thickness, the firstthickness being equal to or less than the second thickness.
 9. Theheater unit according to claim 7, wherein the second uniform heat plateincludes a surface in contact with the insulated resistance heatingelement, the surface having a flatness that is 100 μm or less.
 10. Theheater unit according to claim 7, wherein the second uniform heat plateincludes a surface in contact with the insulated resistance heatingelement, the surface having an upwardly concave shape.
 11. The heaterunit according to claim 7, wherein the first uniform heat plate and thesecond uniform heat plate are bonded together by vacuum-suction means.12. The heater unit according to claim 11, further comprising avacuum-sealing device used as the vacuum-suction means.
 13. The heaterunit according to claim 12, wherein the vacuum-sealing device isdisposed adjacent to an external peripheral section of the first uniformheat plate and the second uniform heat plate.
 14. The heater unitaccording to claim 7, wherein the first uniform heat plate and thesecond uniform heat plate are bonded together by a combination of screwsand bearings.
 15. A heating and cooling device comprising the heaterunit according to claim 1, and a mobile cooling plate disposedunderneath the heater unit.
 16. A manufacturing apparatus for glasssubstrates or semiconductor substrates for flat panel displays,comprising the heater unit according to claim
 1. 17. An inspectionapparatus for glass substrates or semiconductor substrates for flatpanel displays, comprising the heater unit according to claim
 1. 18. Amanufacturing apparatus for glass substrates or semiconductor substratesfor flat panel displays, comprising the heating and cooling deviceaccording to claim
 15. 19. An inspection apparatus for glass substratesor semiconductor substrates for flat panel displays, comprising theheating and cooling device according to claim 15.